The influence of anodic oxide on the electron concentration in n-GaAs

The influence of anodic oxide on the electron concentration near the Ga 2 O 3 – n -GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in...

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Veröffentlicht in:	Russian physics journal 2014, Vol.56 (9), p.984-989
Hauptverfasser:	Kalygina, V. M., Vishnikina, V. V., Zarubin, А. N., Petrova, Yu. S., Skakunov, М. S., Тоlbanov, О. P., Тyazhev, А. V., Yaskevich, Т. М.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Condensed Matter Physics Electrons Epitaxy Gallium arsenide Hadrons Heavy Ions Lasers Mathematical and Computational Physics Nuclear Physics Optical Devices Optics Photoluminescence Photonics Physics Physics and Astronomy Theoretical
Online-Zugang:	Volltext
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