Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties

The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In x Ga 1 − x As and In x Ga 1 − x P) and substrates (GaAs, InP) has been investigated. I...

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Veröffentlicht in:	Physics of the solid state 2010-11, Vol.52 (11), p.2267-2270
Hauptverfasser:	Zvonkov, B. N., Vikhrova, O. V., Danilov, Yu. A., Drozdov, Yu. N., Kudrin, A. V., Sapozhnikov, M. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	2010) Magnetism and Ferroelectricity Epitaxy Ferromagnetism Gallium arsenide Magnetic properties Magnetization March 15–19 Physics Physics and Astronomy Proceedings of the XIV International Symposium “Nanophysics and Nanoelectronics-2010” (Nizhni Novgorod Russia Solid State Physics
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