Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties
The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In x Ga 1 − x As and In x Ga 1 − x P) and substrates (GaAs, InP) has been investigated. I...
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| Veröffentlicht in: | Physics of the solid state 2010-11, Vol.52 (11), p.2267-2270 |
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| container_title | Physics of the solid state |
| container_volume | 52 |
| creator | Zvonkov, B. N. Vikhrova, O. V. Danilov, Yu. A. Drozdov, Yu. N. Kudrin, A. V. Sapozhnikov, M. V. |
| description | The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane. |
| doi_str_mv | 10.1134/S1063783410110090 |
| format | Article |
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x
Ga
1 −
x
As and In
x
Ga
1 −
x
P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783410110090</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>2010) Magnetism and Ferroelectricity ; Epitaxy ; Ferromagnetism ; Gallium arsenide ; Magnetic properties ; Magnetization ; March 15–19 ; Physics ; Physics and Astronomy ; Proceedings of the XIV International Symposium “Nanophysics and Nanoelectronics-2010” (Nizhni Novgorod ; Russia ; Solid State Physics</subject><ispartof>Physics of the solid state, 2010-11, Vol.52 (11), p.2267-2270</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-47aec593bc90fc0ea52f01e7017d3340d108e2190027394ea7dd8e42bf53df033</citedby><cites>FETCH-LOGICAL-c361t-47aec593bc90fc0ea52f01e7017d3340d108e2190027394ea7dd8e42bf53df033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783410110090$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783410110090$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Vikhrova, O. V.</creatorcontrib><creatorcontrib>Danilov, Yu. A.</creatorcontrib><creatorcontrib>Drozdov, Yu. N.</creatorcontrib><creatorcontrib>Kudrin, A. V.</creatorcontrib><creatorcontrib>Sapozhnikov, M. V.</creatorcontrib><title>Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.</description><subject>2010) Magnetism and Ferroelectricity</subject><subject>Epitaxy</subject><subject>Ferromagnetism</subject><subject>Gallium arsenide</subject><subject>Magnetic properties</subject><subject>Magnetization</subject><subject>March 15–19</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Proceedings of the XIV International Symposium “Nanophysics and Nanoelectronics-2010” (Nizhni Novgorod</subject><subject>Russia</subject><subject>Solid State Physics</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhhdRsFZ_gLdcPWyd2exH91hKrQVFsAreljQ7WVN2syVJxf57s9RLEWQOMyTPMyFvFN0iTBB5er9GyHkx5SkCIkAJZ9EIQ4vzNIfzYc55PNxfRlfObSFQmJWj6GOhFEnPesVk3-0sOae_iAlTM0_G6ZaY88MpOaYNW4pnM3OsFQeyjvWG-U_SlnWiMeS1ZDvb78h6Te46ulCidXTz28fR-8Pibf4YP70sV_PZUyx5jj5OC0EyK_lGlqAkkMgSBUgFYFFznkKNMKUES4Ck4GVKoqjrKaXJRmW8VsD5OJoc9zaipUob1XsrZKiaOi17Qyr8oZqFx3iGWGIQ7k6EwHj69o3YO1et1q-nLB5ZaXvnLKlqZ3Un7KFCqIbcqz-5Byc5Oi6wpiFbbfu9NSGDf6QfDk2Dag</recordid><startdate>20101101</startdate><enddate>20101101</enddate><creator>Zvonkov, B. N.</creator><creator>Vikhrova, O. V.</creator><creator>Danilov, Yu. A.</creator><creator>Drozdov, Yu. N.</creator><creator>Kudrin, A. V.</creator><creator>Sapozhnikov, M. V.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20101101</creationdate><title>Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties</title><author>Zvonkov, B. N. ; Vikhrova, O. V. ; Danilov, Yu. A. ; Drozdov, Yu. N. ; Kudrin, A. V. ; Sapozhnikov, M. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-47aec593bc90fc0ea52f01e7017d3340d108e2190027394ea7dd8e42bf53df033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>2010) Magnetism and Ferroelectricity</topic><topic>Epitaxy</topic><topic>Ferromagnetism</topic><topic>Gallium arsenide</topic><topic>Magnetic properties</topic><topic>Magnetization</topic><topic>March 15–19</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Proceedings of the XIV International Symposium “Nanophysics and Nanoelectronics-2010” (Nizhni Novgorod</topic><topic>Russia</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Vikhrova, O. V.</creatorcontrib><creatorcontrib>Danilov, Yu. A.</creatorcontrib><creatorcontrib>Drozdov, Yu. N.</creatorcontrib><creatorcontrib>Kudrin, A. V.</creatorcontrib><creatorcontrib>Sapozhnikov, M. V.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zvonkov, B. N.</au><au>Vikhrova, O. V.</au><au>Danilov, Yu. A.</au><au>Drozdov, Yu. N.</au><au>Kudrin, A. V.</au><au>Sapozhnikov, M. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2010-11-01</date><risdate>2010</risdate><volume>52</volume><issue>11</issue><spage>2267</spage><epage>2270</epage><pages>2267-2270</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In
x
Ga
1 −
x
As and In
x
Ga
1 −
x
P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063783410110090</doi><tpages>4</tpages></addata></record> |
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| subjects | 2010) Magnetism and Ferroelectricity Epitaxy Ferromagnetism Gallium arsenide Magnetic properties Magnetization March 15–19 Physics Physics and Astronomy Proceedings of the XIV International Symposium “Nanophysics and Nanoelectronics-2010” (Nizhni Novgorod Russia Solid State Physics |
| title | Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties |
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