Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature
Current-voltage characteristics of the n -CdS/ p -CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at h...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-03, Vol.44 (3), p.313-317 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Usmonov, Sh. N. Mirsagatov, Sh. A. Leyderman, A. Yu |
| description | Current-voltage characteristics of the
n
-CdS/
p
-CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at high voltages (as high as 2.6 V), there is a portion of sublinear growth of the current with voltage. Experimental results are interpreted based on the theory of the effect of injection depletion. It is shown that the product of mobility of majority carriers by the concentration of deep centers increases as the temperature is increased. |
| doi_str_mv | 10.1134/S1063782610030073 |
| format | Article |
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n
-CdS/
p
-CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at high voltages (as high as 2.6 V), there is a portion of sublinear growth of the current with voltage. Experimental results are interpreted based on the theory of the effect of injection depletion. It is shown that the product of mobility of majority carriers by the concentration of deep centers increases as the temperature is increased.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782610030073</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Alloys ; Interfaces ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Semiconductor Structures ; Surfaces</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.313-317</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-b95a3ed2f8f49b55b28539980ca689fcff867c2d7da7c53386e80665d2ada6763</citedby><cites>FETCH-LOGICAL-c327t-b95a3ed2f8f49b55b28539980ca689fcff867c2d7da7c53386e80665d2ada6763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782610030073$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782610030073$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Usmonov, Sh. N.</creatorcontrib><creatorcontrib>Mirsagatov, Sh. A.</creatorcontrib><creatorcontrib>Leyderman, A. Yu</creatorcontrib><title>Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Current-voltage characteristics of the
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p
-CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at high voltages (as high as 2.6 V), there is a portion of sublinear growth of the current with voltage. Experimental results are interpreted based on the theory of the effect of injection depletion. It is shown that the product of mobility of majority carriers by the concentration of deep centers increases as the temperature is increased.</description><subject>Alloys</subject><subject>Interfaces</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Semiconductor Structures</subject><subject>Surfaces</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMtqwzAQRUVpoWnaD-jOP-BED-vhZQh9BAJdJF0bRRrZDolsZLmQv69M2lWhCKQZ3TkD9yL0TPCCEFYsdwQLJhUVBGOGsWQ3aEZwiXNRyPJ2qgXLJ_0ePQzDEWNCFC9mqNnF0V6yzmWxgcyMIYCP-Vd3irpOfaODNhFCO8TW_E75fG13yz7de8gaSHI3xDCaOAbILPTgbevrrPNZhHMPQU_CI7pz-jTA0887R5-vL_v1e779eNusV9vcMCpjfii5ZmCpU64oD5wfqOKsLBU2WqjSGeeUkIZaabU0nDElQGEhuKXaaiEFm6PFdW-tT1C13nUxWUjHwrk1nQfXpv8VEymAApMiAeQKmGRjCOCqPrRnHS4VwdWUbfUn28TQKzOkWV9DqI7dGHzy9Q_0DaVNfFc</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Usmonov, Sh. N.</creator><creator>Mirsagatov, Sh. A.</creator><creator>Leyderman, A. Yu</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100301</creationdate><title>Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature</title><author>Usmonov, Sh. N. ; Mirsagatov, Sh. A. ; Leyderman, A. Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-b95a3ed2f8f49b55b28539980ca689fcff867c2d7da7c53386e80665d2ada6763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Alloys</topic><topic>Interfaces</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Semiconductor Structures</topic><topic>Surfaces</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Usmonov, Sh. N.</creatorcontrib><creatorcontrib>Mirsagatov, Sh. A.</creatorcontrib><creatorcontrib>Leyderman, A. Yu</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Usmonov, Sh. N.</au><au>Mirsagatov, Sh. A.</au><au>Leyderman, A. Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2010-03-01</date><risdate>2010</risdate><volume>44</volume><issue>3</issue><spage>313</spage><epage>317</epage><pages>313-317</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Current-voltage characteristics of the
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| ispartof | Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.313-317 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Alloys Interfaces Magnetic Materials Magnetism Physics Physics and Astronomy Semiconductor Structures Surfaces |
| title | Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature |
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