The effect of annealing on the properties of [Ga.sub.2][O.sub.3] anodic films
The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. [Ga.sub.2][O.sub.3] films with thicknesses of 200-300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration [N.sub.d] = (1-2) x [10.sup.16] [cm.sup...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2012-02, Vol.46 (2), p.267 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Kalygina, V.M Zarubin, A.N Nayden, Ye. P Novikov, V.A Petrova, Yu. S Tolbanov, O.P Tyazhev, A.V Yaskevich, T.M |
| description | The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. [Ga.sub.2][O.sub.3] films with thicknesses of 200-300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration [N.sub.d] = (1-2) x [10.sup.16] [cm.sup.-3]. It is shown that, after annealing at 900°C for 30 min, the gallium arsenide films contain only the β [Ga.sub.2][O.sub.3] phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of β-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the [Ga.sub.2][O.sub.3] films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni--GaAs--[Ga.sub.2][O.sub.3]--V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode. DOI: 10.1134/S1063782612020145 |
| doi_str_mv | 10.1134/S1063782612020145 |
| format | Article |
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It is shown that the response of the V/Ni--GaAs--[Ga.sub.2][O.sub.3]--V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode. 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It has been established that the electrical conductivity of the [Ga.sub.2][O.sub.3] films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni--GaAs--[Ga.sub.2][O.sub.3]--V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode. 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[Ga.sub.2][O.sub.3] films with thicknesses of 200-300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration [N.sub.d] = (1-2) x [10.sup.16] [cm.sup.-3]. It is shown that, after annealing at 900°C for 30 min, the gallium arsenide films contain only the β [Ga.sub.2][O.sub.3] phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of β-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the [Ga.sub.2][O.sub.3] films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni--GaAs--[Ga.sub.2][O.sub.3]--V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode. DOI: 10.1134/S1063782612020145</abstract><pub>Springer</pub><doi>10.1134/S1063782612020145</doi></addata></record> |
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| source | SpringerNature Journals |
| subjects | Analysis Electric properties Electrical conductivity Gallium arsenide Plasma physics |
| title | The effect of annealing on the properties of [Ga.sub.2][O.sub.3] anodic films |
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