The effect of annealing on the properties of [Ga.sub.2][O.sub.3] anodic films

The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. [Ga.sub.2][O.sub.3] films with thicknesses of 200-300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration [N.sub.d] = (1-2) x [10.sup.16] [cm.sup.-3]. It is shown that, after annealing at 900°C for 30 min, the gallium arsenide films contain only the β [Ga.sub.2][O.sub.3] phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of β-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the [Ga.sub.2][O.sub.3] films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni--GaAs--[Ga.sub.2][O.sub.3]--V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode. DOI: 10.1134/S1063782612020145