Effect of annealing on the luminescence of β-CuI crystals

Effect of annealing on the luminescence of β-CuI crystals

The photoluminescence spectra of CuI samples containing different numbers of intrinsic defects are studied at the temperature 80 K. The samples were excited with continuous-wave (cw) and pulse optical excitation. Emission peaks related to bound and free excitons, and to the recombination of electron...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-02, Vol.46 (2), p.149
Hauptverfasser: Gruzintsev, A.N, Zagorodnev, W.N
Format: Artikel
Sprache:eng
Schlagworte:
Lasers
Photoluminescence
Semiconductors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The photoluminescence spectra of CuI samples containing different numbers of intrinsic defects are studied at the temperature 80 K. The samples were excited with continuous-wave (cw) and pulse optical excitation. Emission peaks related to bound and free excitons, and to the recombination of electrons at shallow and deep crystal-lattice defect levels are observed. It is found that CuI crystals subjected to high-temperature annealing contain hexagonal phase inclusions. DOI: 10.1134/S1063782612020133
ISSN:1063-7826
DOI:10.1134/S1063782612020133