Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures

Conduction mechanisms in Si-polymer-metal heterostructures with oligo-β-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport mechan...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2010-07, Vol.44 (7), p.875-878
Hauptverfasser:	Hasannli, Sh. M., Mursakulov, N. N., Samedova, U. F., Abdulzade, N. N., Mamedov, B. A., Guseynov, R. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Interfaces Magnetic Materials Magnetism Physics Physics and Astronomy Polymers Semiconductor Structures Surfaces
Online-Zugang:	Volltext
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