Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures
Conduction mechanisms in Si-polymer-metal heterostructures with oligo-β-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport mechan...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-07, Vol.44 (7), p.875-878 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 44 |
| creator | Hasannli, Sh. M. Mursakulov, N. N. Samedova, U. F. Abdulzade, N. N. Mamedov, B. A. Guseynov, R. K. |
| description | Conduction mechanisms in Si-polymer-metal heterostructures with oligo-β-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport mechanisms operate in different temperature ranges and under different electric fields. |
| doi_str_mv | 10.1134/S1063782610070080 |
| format | Article |
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| subjects | Analysis Interfaces Magnetic Materials Magnetism Physics Physics and Astronomy Polymers Semiconductor Structures Surfaces |
| title | Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures |
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