Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors
Measurements of the 55 Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2–3) × 10 9 Ωcm at 300 K) have been used to determine the concentration of uncompensated donors (1–3) × 10 1...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2012-03, Vol.46 (3), p.374-381 |
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Zusammenfassung: | Measurements of the
55
Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2–3) × 10
9
Ωcm at 300 K) have been used to determine the concentration of uncompensated donors (1–3) × 10
12
cm
−3
. Similar measurements performed for Cd
0.9
Zn
0.1
Te crystals with the resistivity (3–5) × 10
10
Ω cm at 300 K have shown that the concentration of uncompensated donors in this case is lower by approximately four orders of magnitude. The results of calculations show that, due to such a significant decrease in the concentration of uncompensated donors, the efficiency of X- and γ-ray radiation detection in the photon energy range 59 to 662 keV can decrease by one-three orders of magnitude (depending on the photon energy and the lifetime of charge carriers in the space-charge region). The results obtained account for the apparent poor detecting properties of the Cd
0.9
Zn
0.1
Te detectors. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782612030153 |