Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors

Measurements of the 55 Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2–3) × 10 9 Ωcm at 300 K) have been used to determine the concentration of uncompensated donors (1–3) × 10 1...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-03, Vol.46 (3), p.374-381
Hauptverfasser: Kosyachenko, L. A., Sklyarchuk, V. M., Melnychuk, S. V., Maslyanchuk, O. L., Grushko, E. V., Sklyarchuk, O. V.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Measurements of the 55 Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2–3) × 10 9 Ωcm at 300 K) have been used to determine the concentration of uncompensated donors (1–3) × 10 12 cm −3 . Similar measurements performed for Cd 0.9 Zn 0.1 Te crystals with the resistivity (3–5) × 10 10 Ω cm at 300 K have shown that the concentration of uncompensated donors in this case is lower by approximately four orders of magnitude. The results of calculations show that, due to such a significant decrease in the concentration of uncompensated donors, the efficiency of X- and γ-ray radiation detection in the photon energy range 59 to 662 keV can decrease by one-three orders of magnitude (depending on the photon energy and the lifetime of charge carriers in the space-charge region). The results obtained account for the apparent poor detecting properties of the Cd 0.9 Zn 0.1 Te detectors.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612030153