Study of main HgMnZnTe band parameters
The results of an theoretical and experimental study of main band parameters of multicomponent HgMnZnTe alloys are presented. Empirical formulas are suggested for calculating the band gap and intrinsic carrier concentration in the parabolic approximation in wide temperature and composition ranges. T...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-08, Vol.44 (8), p.993-996 |
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| container_end_page | 996 |
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| container_issue | 8 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 44 |
| creator | Ostapov, S. E. Frasunyak, V. M. Zhikharevich, V. V. |
| description | The results of an theoretical and experimental study of main band parameters of multicomponent HgMnZnTe alloys are presented. Empirical formulas are suggested for calculating the band gap and intrinsic carrier concentration in the parabolic approximation in wide temperature and composition ranges. The results of the theoretical study are in good agreement with experimental and published data. |
| doi_str_mv | 10.1134/S1063782610080051 |
| format | Article |
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The results of the theoretical study are in good agreement with experimental and published data.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782610080051</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Alloys ; Chemical properties ; Electrical and Optical Properties Of Semiconductors ; Electronics industry ; Epitaxy ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.993-996</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c279t-e99a77134d764eca8ed58014a8b22f15eb8fd6895f9484a70ea2fa637e720ea63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782610080051$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782610080051$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27928,27929,41492,42561,51323</link.rule.ids></links><search><creatorcontrib>Ostapov, S. 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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.993-996 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerNature Journals |
| subjects | Alloys Chemical properties Electrical and Optical Properties Of Semiconductors Electronics industry Epitaxy Magnetic Materials Magnetism Physics Physics and Astronomy |
| title | Study of main HgMnZnTe band parameters |
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