Synchrotron study of the formation of nanoclusters in [Al.sub.2][O.sub.3]/Si[O.sub.x]/[Al.sub.2][O.sub.3]/Si[O.sub.x]/ ... /Si multilayer nanostructures
[Al.sub.2][O.sub.3]/Si[O.sub.x]/A[1.sub.2][O.sub.3]/Si[O.sub.x]/.../Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclu...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-10, Vol.47 (10), p.1316 |
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creator | Turishchev, S. Yu Terekhov, V.A Koyuda, D.A Pankov, K.N Ershov, A.V Grachev, D.A Mashin, A.I Domashevskaya, E.P |
description | [Al.sub.2][O.sub.3]/Si[O.sub.x]/A[1.sub.2][O.sub.3]/Si[O.sub.x]/.../Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed. DOI: 10.1134/S106378261310028X |
doi_str_mv | 10.1134/S106378261310028X |
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Yu ; Terekhov, V.A ; Koyuda, D.A ; Pankov, K.N ; Ershov, A.V ; Grachev, D.A ; Mashin, A.I ; Domashevskaya, E.P</creator><creatorcontrib>Turishchev, S. Yu ; Terekhov, V.A ; Koyuda, D.A ; Pankov, K.N ; Ershov, A.V ; Grachev, D.A ; Mashin, A.I ; Domashevskaya, E.P</creatorcontrib><description>[Al.sub.2][O.sub.3]/Si[O.sub.x]/A[1.sub.2][O.sub.3]/Si[O.sub.x]/.../Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed. DOI: 10.1134/S106378261310028X</description><identifier>ISSN: 1063-7826</identifier><identifier>DOI: 10.1134/S106378261310028X</identifier><language>eng</language><publisher>Springer</publisher><subject>Aluminum oxide ; Nanotechnology ; Particle accelerators</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2013-10, Vol.47 (10), p.1316</ispartof><rights>COPYRIGHT 2013 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Turishchev, S. 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The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed. 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Yu</creator><creator>Terekhov, V.A</creator><creator>Koyuda, D.A</creator><creator>Pankov, K.N</creator><creator>Ershov, A.V</creator><creator>Grachev, D.A</creator><creator>Mashin, A.I</creator><creator>Domashevskaya, E.P</creator><general>Springer</general><scope/></search><sort><creationdate>20131001</creationdate><title>Synchrotron study of the formation of nanoclusters in [Al.sub.2][O.sub.3]/Si[O.sub.x]/[Al.sub.2][O.sub.3]/Si[O.sub.x]/ ... /Si multilayer nanostructures</title><author>Turishchev, S. Yu ; Terekhov, V.A ; Koyuda, D.A ; Pankov, K.N ; Ershov, A.V ; Grachev, D.A ; Mashin, A.I ; Domashevskaya, E.P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_infotracacademiconefile_A3488738483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum oxide</topic><topic>Nanotechnology</topic><topic>Particle accelerators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Turishchev, S. Yu</creatorcontrib><creatorcontrib>Terekhov, V.A</creatorcontrib><creatorcontrib>Koyuda, D.A</creatorcontrib><creatorcontrib>Pankov, K.N</creatorcontrib><creatorcontrib>Ershov, A.V</creatorcontrib><creatorcontrib>Grachev, D.A</creatorcontrib><creatorcontrib>Mashin, A.I</creatorcontrib><creatorcontrib>Domashevskaya, E.P</creatorcontrib><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Turishchev, S. Yu</au><au>Terekhov, V.A</au><au>Koyuda, D.A</au><au>Pankov, K.N</au><au>Ershov, A.V</au><au>Grachev, D.A</au><au>Mashin, A.I</au><au>Domashevskaya, E.P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synchrotron study of the formation of nanoclusters in [Al.sub.2][O.sub.3]/Si[O.sub.x]/[Al.sub.2][O.sub.3]/Si[O.sub.x]/ ... /Si multilayer nanostructures</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2013-10-01</date><risdate>2013</risdate><volume>47</volume><issue>10</issue><spage>1316</spage><pages>1316-</pages><issn>1063-7826</issn><abstract>[Al.sub.2][O.sub.3]/Si[O.sub.x]/A[1.sub.2][O.sub.3]/Si[O.sub.x]/.../Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed. DOI: 10.1134/S106378261310028X</abstract><pub>Springer</pub><doi>10.1134/S106378261310028X</doi></addata></record> |
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subjects | Aluminum oxide Nanotechnology Particle accelerators |
title | Synchrotron study of the formation of nanoclusters in [Al.sub.2][O.sub.3]/Si[O.sub.x]/[Al.sub.2][O.sub.3]/Si[O.sub.x]/ ... /Si multilayer nanostructures |
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