Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Two new designs for a metamorphic buffer, which are modifications of the In x Al 1 − x As metamorphic buffer due to groups of layers with differing lattice parameters, are proposed and implemented. This makes it possible to affect the relaxation of the metamorphic buffer. The structural and electric...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-07, Vol.47 (7), p.997-1002
Hauptverfasser: Galiev, G. B., Pushkarev, S. S., Vasil’evskii, I. S., Klimov, E. A., Imamov, R. M.
Format: Artikel
Sprache:eng
Schlagworte:
Fabrication
Gallium arsenide
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
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Zusammenfassung:Two new designs for a metamorphic buffer, which are modifications of the In x Al 1 − x As metamorphic buffer due to groups of layers with differing lattice parameters, are proposed and implemented. This makes it possible to affect the relaxation of the metamorphic buffer. The structural and electrical characteristics of the obtained metamorphic HEMT nanoheterostructures are also studied.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613070075