Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density
The temperature dependences of the contact resistance ρ c ( T ) of ohmic Pd-Ti-Pd-Au contacts to n -GaN and n -AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ c ( T ) for both contacts contain portions of exponential decrease ρ c ( T ) and very weak depende...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-09, Vol.47 (9), p.1180-1184 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1184 |
|---|---|
| container_issue | 9 |
| container_start_page | 1180 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 47 |
| creator | Sachenko, A. V. Belyaev, A. E. Boltovets, N. S. Zhilyaev, Yu. V. Kapitanchuk, L. M. Klad’ko, V. P. Konakova, R. V. Kudryk, Ya. Ya Naumov, A. V. Panteleev, V. N. Sheremet, V. N. |
| description | The temperature dependences of the contact resistance ρ
c
(
T
) of ohmic Pd-Ti-Pd-Au contacts to
n
-GaN and
n
-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ
c
(
T
) for both contacts contain portions of exponential decrease ρ
c
(
T
) and very weak dependence ρ
c
(
T
) at higher temperatures. Furthermore, a plateau portion ρ
c
(
T
) is observed in the low-temperature region for the Au-Pd-Ti-Pd-
n
-GaN contact. This portion appears only after rapid thermal annealing (RTA). In principle, the appearance of the plateau portion can be associated with preliminary heavy doping of the near-contact region with a shallow donor impurity and with doping during contact fabrication as a result of RTA, if the contact-forming layer contains a material that is a shallow donor in III–N. The dependences obtained are not explained by existing charge-transport mechanisms. Probable mechanisms explaining the experimental dependences ρ
c
(
T
) for ohmic contacts to
n
-GaN and
n
-AlN are proposed. |
| doi_str_mv | 10.1134/S1063782613090212 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_cross</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A343364839</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A343364839</galeid><sourcerecordid>A343364839</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-906060f5deb3a4c1c09f3f0ffc32cfacd2ab1cbef9ee2ce3d467bd3c79bb5ee03</originalsourceid><addsrcrecordid>eNp9kE1OwzAQhS0EEqVwAHa-QIp_0qRZVhWFSBUsgHXkTMaNq8ZGtivUHXfghpwEV2GHhGYxo5n5nvQeIbeczTiX-d0LZ4UsF6LgklVMcHFGJjxNWZGX1flpLmR2ul-SqxB2jHG-mOcTgmvnBxWNs3RA6JU1YaBOU3A2KojUYzAhKgtIo6N1XX9_fj3RHiN6F6I_QDykF_phYk8V7c22p50JewejZoc2mHi8Jhda7QPe_PYpeVvfv64es83zQ71abjKQooxZxYpUet5hK1UOHFilpWZapzNoBZ1QLYcWdYUoAGWXF2XbSSirtp0jMjkls1F3q_bYGKtd9ApSdTiYZAm1SfulzKUs8oWsEsBHAJKd4FE3794Myh8bzppTsM2fYBMjRiakX7tF3-zcwdvk6x_oB7HrflI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density</title><source>Springer Nature - Complete Springer Journals</source><creator>Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S. ; Zhilyaev, Yu. V. ; Kapitanchuk, L. M. ; Klad’ko, V. P. ; Konakova, R. V. ; Kudryk, Ya. Ya ; Naumov, A. V. ; Panteleev, V. N. ; Sheremet, V. N.</creator><creatorcontrib>Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S. ; Zhilyaev, Yu. V. ; Kapitanchuk, L. M. ; Klad’ko, V. P. ; Konakova, R. V. ; Kudryk, Ya. Ya ; Naumov, A. V. ; Panteleev, V. N. ; Sheremet, V. N.</creatorcontrib><description>The temperature dependences of the contact resistance ρ
c
(
T
) of ohmic Pd-Ti-Pd-Au contacts to
n
-GaN and
n
-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ
c
(
T
) for both contacts contain portions of exponential decrease ρ
c
(
T
) and very weak dependence ρ
c
(
T
) at higher temperatures. Furthermore, a plateau portion ρ
c
(
T
) is observed in the low-temperature region for the Au-Pd-Ti-Pd-
n
-GaN contact. This portion appears only after rapid thermal annealing (RTA). In principle, the appearance of the plateau portion can be associated with preliminary heavy doping of the near-contact region with a shallow donor impurity and with doping during contact fabrication as a result of RTA, if the contact-forming layer contains a material that is a shallow donor in III–N. The dependences obtained are not explained by existing charge-transport mechanisms. Probable mechanisms explaining the experimental dependences ρ
c
(
T
) for ohmic contacts to
n
-GaN and
n
-AlN are proposed.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782613090212</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Aluminum compounds ; Liquors ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; Palladium ; Physics ; Physics and Astronomy ; Quantum Phenomena ; Semiconductor Structures ; Semiconductors</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1180-1184</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><rights>COPYRIGHT 2013 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-906060f5deb3a4c1c09f3f0ffc32cfacd2ab1cbef9ee2ce3d467bd3c79bb5ee03</citedby><cites>FETCH-LOGICAL-c327t-906060f5deb3a4c1c09f3f0ffc32cfacd2ab1cbef9ee2ce3d467bd3c79bb5ee03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782613090212$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782613090212$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Sachenko, A. V.</creatorcontrib><creatorcontrib>Belyaev, A. E.</creatorcontrib><creatorcontrib>Boltovets, N. S.</creatorcontrib><creatorcontrib>Zhilyaev, Yu. V.</creatorcontrib><creatorcontrib>Kapitanchuk, L. M.</creatorcontrib><creatorcontrib>Klad’ko, V. P.</creatorcontrib><creatorcontrib>Konakova, R. V.</creatorcontrib><creatorcontrib>Kudryk, Ya. Ya</creatorcontrib><creatorcontrib>Naumov, A. V.</creatorcontrib><creatorcontrib>Panteleev, V. N.</creatorcontrib><creatorcontrib>Sheremet, V. N.</creatorcontrib><title>Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The temperature dependences of the contact resistance ρ
c
(
T
) of ohmic Pd-Ti-Pd-Au contacts to
n
-GaN and
n
-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ
c
(
T
) for both contacts contain portions of exponential decrease ρ
c
(
T
) and very weak dependence ρ
c
(
T
) at higher temperatures. Furthermore, a plateau portion ρ
c
(
T
) is observed in the low-temperature region for the Au-Pd-Ti-Pd-
n
-GaN contact. This portion appears only after rapid thermal annealing (RTA). In principle, the appearance of the plateau portion can be associated with preliminary heavy doping of the near-contact region with a shallow donor impurity and with doping during contact fabrication as a result of RTA, if the contact-forming layer contains a material that is a shallow donor in III–N. The dependences obtained are not explained by existing charge-transport mechanisms. Probable mechanisms explaining the experimental dependences ρ
c
(
T
) for ohmic contacts to
n
-GaN and
n
-AlN are proposed.</description><subject>Aluminum compounds</subject><subject>Liquors</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Palladium</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>Semiconductor Structures</subject><subject>Semiconductors</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqVwAHa-QIp_0qRZVhWFSBUsgHXkTMaNq8ZGtivUHXfghpwEV2GHhGYxo5n5nvQeIbeczTiX-d0LZ4UsF6LgklVMcHFGJjxNWZGX1flpLmR2ul-SqxB2jHG-mOcTgmvnBxWNs3RA6JU1YaBOU3A2KojUYzAhKgtIo6N1XX9_fj3RHiN6F6I_QDykF_phYk8V7c22p50JewejZoc2mHi8Jhda7QPe_PYpeVvfv64es83zQ71abjKQooxZxYpUet5hK1UOHFilpWZapzNoBZ1QLYcWdYUoAGWXF2XbSSirtp0jMjkls1F3q_bYGKtd9ApSdTiYZAm1SfulzKUs8oWsEsBHAJKd4FE3794Myh8bzppTsM2fYBMjRiakX7tF3-zcwdvk6x_oB7HrflI</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Sachenko, A. V.</creator><creator>Belyaev, A. E.</creator><creator>Boltovets, N. S.</creator><creator>Zhilyaev, Yu. V.</creator><creator>Kapitanchuk, L. M.</creator><creator>Klad’ko, V. P.</creator><creator>Konakova, R. V.</creator><creator>Kudryk, Ya. Ya</creator><creator>Naumov, A. V.</creator><creator>Panteleev, V. N.</creator><creator>Sheremet, V. N.</creator><general>Springer US</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130901</creationdate><title>Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density</title><author>Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S. ; Zhilyaev, Yu. V. ; Kapitanchuk, L. M. ; Klad’ko, V. P. ; Konakova, R. V. ; Kudryk, Ya. Ya ; Naumov, A. V. ; Panteleev, V. N. ; Sheremet, V. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-906060f5deb3a4c1c09f3f0ffc32cfacd2ab1cbef9ee2ce3d467bd3c79bb5ee03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum compounds</topic><topic>Liquors</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Palladium</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Phenomena</topic><topic>Semiconductor Structures</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sachenko, A. V.</creatorcontrib><creatorcontrib>Belyaev, A. E.</creatorcontrib><creatorcontrib>Boltovets, N. S.</creatorcontrib><creatorcontrib>Zhilyaev, Yu. V.</creatorcontrib><creatorcontrib>Kapitanchuk, L. M.</creatorcontrib><creatorcontrib>Klad’ko, V. P.</creatorcontrib><creatorcontrib>Konakova, R. V.</creatorcontrib><creatorcontrib>Kudryk, Ya. Ya</creatorcontrib><creatorcontrib>Naumov, A. V.</creatorcontrib><creatorcontrib>Panteleev, V. N.</creatorcontrib><creatorcontrib>Sheremet, V. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sachenko, A. V.</au><au>Belyaev, A. E.</au><au>Boltovets, N. S.</au><au>Zhilyaev, Yu. V.</au><au>Kapitanchuk, L. M.</au><au>Klad’ko, V. P.</au><au>Konakova, R. V.</au><au>Kudryk, Ya. Ya</au><au>Naumov, A. V.</au><au>Panteleev, V. N.</au><au>Sheremet, V. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2013-09-01</date><risdate>2013</risdate><volume>47</volume><issue>9</issue><spage>1180</spage><epage>1184</epage><pages>1180-1184</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The temperature dependences of the contact resistance ρ
c
(
T
) of ohmic Pd-Ti-Pd-Au contacts to
n
-GaN and
n
-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ
c
(
T
) for both contacts contain portions of exponential decrease ρ
c
(
T
) and very weak dependence ρ
c
(
T
) at higher temperatures. Furthermore, a plateau portion ρ
c
(
T
) is observed in the low-temperature region for the Au-Pd-Ti-Pd-
n
-GaN contact. This portion appears only after rapid thermal annealing (RTA). In principle, the appearance of the plateau portion can be associated with preliminary heavy doping of the near-contact region with a shallow donor impurity and with doping during contact fabrication as a result of RTA, if the contact-forming layer contains a material that is a shallow donor in III–N. The dependences obtained are not explained by existing charge-transport mechanisms. Probable mechanisms explaining the experimental dependences ρ
c
(
T
) for ohmic contacts to
n
-GaN and
n
-AlN are proposed.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1134/S1063782613090212</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1180-1184 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_gale_infotracacademiconefile_A343364839 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Aluminum compounds Liquors Low-Dimensional Systems Magnetic Materials Magnetism Palladium Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures Semiconductors |
| title | Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T06%3A19%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Formation%20mechanism%20of%20contact%20resistance%20to%20III%E2%80%93N%20heterostructures%20with%20a%20high%20dislocation%20density&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Sachenko,%20A.%20V.&rft.date=2013-09-01&rft.volume=47&rft.issue=9&rft.spage=1180&rft.epage=1184&rft.pages=1180-1184&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782613090212&rft_dat=%3Cgale_cross%3EA343364839%3C/gale_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A343364839&rfr_iscdi=true |