Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAIAs/InGaAs MHEMT heterostructures

The results of studying the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and atomic crystal structure of [In.sub.0.70][Al.sub.0.30]As/[In.sub.0.76] [Ga.sub.0.24]As/[In.sub.0.70][Al.sub.0.30]As metamorphic high-electron-mobility transistor...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2013-04, Vol.47 (4), p.532
Hauptverfasser:	Galiev, G.B, Pushkarev, S.S, Vasil'evskii, I.S, Zhigalina, O.M, Klimov, E.A, Zhigalina, V.G, Imamov, R.M
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Crystals Epitaxy Gallium arsenide Structure
Online-Zugang:	Volltext
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