Effect of the implantation dose and annealing time on the luminescence properties of
The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 x [10.sup.13] - 1.7 x [10.sup.15] [cm.sup.-2] and the subsequent annealing at a temperature of 700[degrees]C for 0.5-2.0 h in a chlorine-co...
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| Veröffentlicht in: | Physics of the solid state 2016-12, Vol.58 (12), p.2499 |
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| container_issue | 12 |
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| container_title | Physics of the solid state |
| container_volume | 58 |
| creator | Sobolev, N.A Kalyadin, A.E Aruev, P.N Zabrodskii, V.V Shek, E.I Shtelmakh, K.F Karabeshkin, K.V |
| description | The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 x [10.sup.13] - 1.7 x [10.sup.15] [cm.sup.-2] and the subsequent annealing at a temperature of 700[degrees]C for 0.5-2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 [micro]m, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically. |
| doi_str_mv | 10.1134/S1063783416120283 |
| format | Article |
| fullrecord | <record><control><sourceid>gale</sourceid><recordid>TN_cdi_gale_incontextgauss_ISR_A495831584</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A495831584</galeid><sourcerecordid>A495831584</sourcerecordid><originalsourceid>FETCH-gale_incontextgauss_ISR_A4958315843</originalsourceid><addsrcrecordid>eNqVjMtqwzAUREVoIO7jA7LTNgs3upas2MtSUppt4r0R9rWjIl8ZS4Z-fmzoD3QxzMA5DGN7EO8AUh1vILQ8FVKBhkxkhdywBEQpUq20eFq3lunKd-w5hB8hACAvE1aduw6byH3H4x25HUZnKJpoPfHWB-SG2iWExlnqebQD8gWtrpsHSxgapAb5OPkRp2gxLFevbNsZF_Dtr1_Y4etcfX6nvXFYW2o8RfyNvZlDqC-3a_2hyryQkBdK_sd9AKUSSxo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of the implantation dose and annealing time on the luminescence properties of</title><source>SpringerLink Journals</source><creator>Sobolev, N.A ; Kalyadin, A.E ; Aruev, P.N ; Zabrodskii, V.V ; Shek, E.I ; Shtelmakh, K.F ; Karabeshkin, K.V</creator><creatorcontrib>Sobolev, N.A ; Kalyadin, A.E ; Aruev, P.N ; Zabrodskii, V.V ; Shek, E.I ; Shtelmakh, K.F ; Karabeshkin, K.V</creatorcontrib><description>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 x [10.sup.13] - 1.7 x [10.sup.15] [cm.sup.-2] and the subsequent annealing at a temperature of 700[degrees]C for 0.5-2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 [micro]m, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783416120283</identifier><language>eng</language><publisher>Springer</publisher><subject>Analysis ; Annealing ; Photoluminescence ; Silicon</subject><ispartof>Physics of the solid state, 2016-12, Vol.58 (12), p.2499</ispartof><rights>COPYRIGHT 2016 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Sobolev, N.A</creatorcontrib><creatorcontrib>Kalyadin, A.E</creatorcontrib><creatorcontrib>Aruev, P.N</creatorcontrib><creatorcontrib>Zabrodskii, V.V</creatorcontrib><creatorcontrib>Shek, E.I</creatorcontrib><creatorcontrib>Shtelmakh, K.F</creatorcontrib><creatorcontrib>Karabeshkin, K.V</creatorcontrib><title>Effect of the implantation dose and annealing time on the luminescence properties of</title><title>Physics of the solid state</title><description>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 x [10.sup.13] - 1.7 x [10.sup.15] [cm.sup.-2] and the subsequent annealing at a temperature of 700[degrees]C for 0.5-2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 [micro]m, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</description><subject>Analysis</subject><subject>Annealing</subject><subject>Photoluminescence</subject><subject>Silicon</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqVjMtqwzAUREVoIO7jA7LTNgs3upas2MtSUppt4r0R9rWjIl8ZS4Z-fmzoD3QxzMA5DGN7EO8AUh1vILQ8FVKBhkxkhdywBEQpUq20eFq3lunKd-w5hB8hACAvE1aduw6byH3H4x25HUZnKJpoPfHWB-SG2iWExlnqebQD8gWtrpsHSxgapAb5OPkRp2gxLFevbNsZF_Dtr1_Y4etcfX6nvXFYW2o8RfyNvZlDqC-3a_2hyryQkBdK_sd9AKUSSxo</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Sobolev, N.A</creator><creator>Kalyadin, A.E</creator><creator>Aruev, P.N</creator><creator>Zabrodskii, V.V</creator><creator>Shek, E.I</creator><creator>Shtelmakh, K.F</creator><creator>Karabeshkin, K.V</creator><general>Springer</general><scope>ISR</scope></search><sort><creationdate>20161201</creationdate><title>Effect of the implantation dose and annealing time on the luminescence properties of</title><author>Sobolev, N.A ; Kalyadin, A.E ; Aruev, P.N ; Zabrodskii, V.V ; Shek, E.I ; Shtelmakh, K.F ; Karabeshkin, K.V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_incontextgauss_ISR_A4958315843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Analysis</topic><topic>Annealing</topic><topic>Photoluminescence</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sobolev, N.A</creatorcontrib><creatorcontrib>Kalyadin, A.E</creatorcontrib><creatorcontrib>Aruev, P.N</creatorcontrib><creatorcontrib>Zabrodskii, V.V</creatorcontrib><creatorcontrib>Shek, E.I</creatorcontrib><creatorcontrib>Shtelmakh, K.F</creatorcontrib><creatorcontrib>Karabeshkin, K.V</creatorcontrib><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sobolev, N.A</au><au>Kalyadin, A.E</au><au>Aruev, P.N</au><au>Zabrodskii, V.V</au><au>Shek, E.I</au><au>Shtelmakh, K.F</au><au>Karabeshkin, K.V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the implantation dose and annealing time on the luminescence properties of</atitle><jtitle>Physics of the solid state</jtitle><date>2016-12-01</date><risdate>2016</risdate><volume>58</volume><issue>12</issue><spage>2499</spage><pages>2499-</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 x [10.sup.13] - 1.7 x [10.sup.15] [cm.sup.-2] and the subsequent annealing at a temperature of 700[degrees]C for 0.5-2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 [micro]m, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</abstract><pub>Springer</pub><doi>10.1134/S1063783416120283</doi><tpages>4</tpages></addata></record> |
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| subjects | Analysis Annealing Photoluminescence Silicon |
| title | Effect of the implantation dose and annealing time on the luminescence properties of |
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