Vorrichtung zum Strukturieren einer photolithographischen Schicht

The first pattern (100) is determined by a predetermined number of addressed pixels. A second pattern (102) is produced on a second spatial light modulator which has a multiplicity of pixels. The second pattern has a first area (102a) of addressed pixels, which coincides with the first pattern. Next...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Paufler, J, Seltmann, R, Kueck, H
Format: Patent
Sprache:ger
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Paufler, J
Seltmann, R
Kueck, H
description The first pattern (100) is determined by a predetermined number of addressed pixels. A second pattern (102) is produced on a second spatial light modulator which has a multiplicity of pixels. The second pattern has a first area (102a) of addressed pixels, which coincides with the first pattern. Next to the first area of addressed pixels is a second area (102b) of addressed pixels. The first and second patterns are reproduced on an area of the layer to be structured and to be exposed. The second area of the second pattern has an addressed pixel perpendicular to the expansion direction of the first area of the second pattern. USE/ADVANTAGE - Micro system technology, thin-film technology, production of flat screens, direct exposure of semiconductor wafers, formation of masks and reticles for microlithography. Limitation of size of structure increment on basis of pixel width of spatial light modulator and of reproduction diameter of projection lens is eliminated without impairing writing s peed.
format Patent
fullrecord <record><control><sourceid>fraunhofer_E3A</sourceid><recordid>TN_cdi_fraunhofer_primary_oai_fraunhofer_de_PX_40773</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_fraunhofer_de_PX_40773</sourcerecordid><originalsourceid>FETCH-fraunhofer_primary_oai_fraunhofer_de_PX_407733</originalsourceid><addsrcrecordid>eNrjZHAMyy8qykzOKCnNS1eoKs1VCC4pKs0uKS3KTC1KzVNIzcxLLVIoyMgvyc_JLMnITy9KLMjILE7OAMoFJ2eANPIwsKYl5hSn8kJpbgYTN9cQZw_dtKLE0ryM_LTUoviCoszcxKLK-PzEzHgk4ZTU-ICIeBMDc3NjYzK1AQCFZUT9</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Vorrichtung zum Strukturieren einer photolithographischen Schicht</title><source>Fraunhofer-ePrints</source><creator>Paufler, J ; Seltmann, R ; Kueck, H</creator><creatorcontrib>Paufler, J ; Seltmann, R ; Kueck, H</creatorcontrib><description>The first pattern (100) is determined by a predetermined number of addressed pixels. A second pattern (102) is produced on a second spatial light modulator which has a multiplicity of pixels. The second pattern has a first area (102a) of addressed pixels, which coincides with the first pattern. Next to the first area of addressed pixels is a second area (102b) of addressed pixels. The first and second patterns are reproduced on an area of the layer to be structured and to be exposed. The second area of the second pattern has an addressed pixel perpendicular to the expansion direction of the first area of the second pattern. USE/ADVANTAGE - Micro system technology, thin-film technology, production of flat screens, direct exposure of semiconductor wafers, formation of masks and reticles for microlithography. Limitation of size of structure increment on basis of pixel width of spatial light modulator and of reproduction diameter of projection lens is eliminated without impairing writing s peed.</description><language>ger</language><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>308,315,777,4035,27841</link.rule.ids><linktorsrc>$$Uhttp://publica.fraunhofer.de/documents/PX-40773.html$$EView_record_in_Fraunhofer-Gesellschaft$$FView_record_in_$$GFraunhofer-Gesellschaft$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Paufler, J</creatorcontrib><creatorcontrib>Seltmann, R</creatorcontrib><creatorcontrib>Kueck, H</creatorcontrib><title>Vorrichtung zum Strukturieren einer photolithographischen Schicht</title><description>The first pattern (100) is determined by a predetermined number of addressed pixels. A second pattern (102) is produced on a second spatial light modulator which has a multiplicity of pixels. The second pattern has a first area (102a) of addressed pixels, which coincides with the first pattern. Next to the first area of addressed pixels is a second area (102b) of addressed pixels. The first and second patterns are reproduced on an area of the layer to be structured and to be exposed. The second area of the second pattern has an addressed pixel perpendicular to the expansion direction of the first area of the second pattern. USE/ADVANTAGE - Micro system technology, thin-film technology, production of flat screens, direct exposure of semiconductor wafers, formation of masks and reticles for microlithography. Limitation of size of structure increment on basis of pixel width of spatial light modulator and of reproduction diameter of projection lens is eliminated without impairing writing s peed.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>AFSUM</sourceid><sourceid>E3A</sourceid><recordid>eNrjZHAMyy8qykzOKCnNS1eoKs1VCC4pKs0uKS3KTC1KzVNIzcxLLVIoyMgvyc_JLMnITy9KLMjILE7OAMoFJ2eANPIwsKYl5hSn8kJpbgYTN9cQZw_dtKLE0ryM_LTUoviCoszcxKLK-PzEzHgk4ZTU-ICIeBMDc3NjYzK1AQCFZUT9</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Paufler, J</creator><creator>Seltmann, R</creator><creator>Kueck, H</creator><scope>AFSUM</scope><scope>E3A</scope></search><sort><creationdate>1999</creationdate><title>Vorrichtung zum Strukturieren einer photolithographischen Schicht</title><author>Paufler, J ; Seltmann, R ; Kueck, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-fraunhofer_primary_oai_fraunhofer_de_PX_407733</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1999</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Paufler, J</creatorcontrib><creatorcontrib>Seltmann, R</creatorcontrib><creatorcontrib>Kueck, H</creatorcontrib><collection>Fraunhofer-ePrints - FT</collection><collection>Fraunhofer-ePrints</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Paufler, J</au><au>Seltmann, R</au><au>Kueck, H</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Vorrichtung zum Strukturieren einer photolithographischen Schicht</title><date>1999</date><risdate>1999</risdate><abstract>The first pattern (100) is determined by a predetermined number of addressed pixels. A second pattern (102) is produced on a second spatial light modulator which has a multiplicity of pixels. The second pattern has a first area (102a) of addressed pixels, which coincides with the first pattern. Next to the first area of addressed pixels is a second area (102b) of addressed pixels. The first and second patterns are reproduced on an area of the layer to be structured and to be exposed. The second area of the second pattern has an addressed pixel perpendicular to the expansion direction of the first area of the second pattern. USE/ADVANTAGE - Micro system technology, thin-film technology, production of flat screens, direct exposure of semiconductor wafers, formation of masks and reticles for microlithography. Limitation of size of structure increment on basis of pixel width of spatial light modulator and of reproduction diameter of projection lens is eliminated without impairing writing s peed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language ger
recordid cdi_fraunhofer_primary_oai_fraunhofer_de_PX_40773
source Fraunhofer-ePrints
title Vorrichtung zum Strukturieren einer photolithographischen Schicht
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T02%3A59%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-fraunhofer_E3A&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Paufler,%20J&rft.date=1999&rft_id=info:doi/&rft_dat=%3Cfraunhofer_E3A%3Eoai_fraunhofer_de_PX_40773%3C/fraunhofer_E3A%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true