On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas

In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform...

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Bibliographische Detailangaben

Hauptverfasser:	Kafle, B, Ridoy, A.I, Miethig, E, Clochard, L, Duffy, E, Hofmann, M, Rentsch, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Lichteinfang Oberflächen: Konditionierung Passivierung Photovoltaik Silicium-Photovoltaik
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