Large Area TOPCon Cells Realized by a PECVD Tube Process

TOPCon is an appealing choice for next-generation solar cells as it minimizes surface recombination, enables low contact resistivities, and provides high thermal stability thereby rendering it compatible with screen-printed metallization. While TOPCon is commonly realized by low-pressure chemical va...

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Hauptverfasser: Feldmann, F, Fellmeth, T, Steinhauser, B, Nagel, H, Ourinson, D, Mack, S, Lohmüller, E, Polzin, J.-I, Benick, J, Richter, A, Moldovan, A, Bivour, M, Clement, F, Rentsch, J, Hermle, M, Glunz, S.W
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creator Feldmann, F
Fellmeth, T
Steinhauser, B
Nagel, H
Ourinson, D
Mack, S
Lohmüller, E
Polzin, J.-I
Benick, J
Richter, A
Moldovan, A
Bivour, M
Clement, F
Rentsch, J
Hermle, M
Glunz, S.W
description TOPCon is an appealing choice for next-generation solar cells as it minimizes surface recombination, enables low contact resistivities, and provides high thermal stability thereby rendering it compatible with screen-printed metallization. While TOPCon is commonly realized by low-pressure chemical vapor deposition (LPCVD), this paper discusses the use of a plasma-enhanced chemical vapor deposition (PECVD) tool, which are commonly used for deposition of SiNx or AlOx. It will be shown that thick screen-printing compatible TOPCon layers providing excellent surface passivation can be realized with such tool. Additionally, the firing stability of TOPCon/SiNx stack will be discussed and first solar cell results will be presented. The IV parameters of the best solar cell were: Voc = 691.2 mV, FF = 80.7%, Jsc = 40.4 mA/cm², and = 22.5%.
doi_str_mv 10.4229/EUPVSEC20192019-2EO.1.4
format Conference Proceeding
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identifier DOI: 10.4229/EUPVSEC20192019-2EO.1.4
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subjects cell
Herstellung und Analyse von hocheffizienten Si-Solarzellen
passivation
PECVD
Photovoltaik
Silicium-Photovoltaik
silicon
title Large Area TOPCon Cells Realized by a PECVD Tube Process
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