HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kallinger, Birgit, Ehlers, Christian, Berwian, Patrick, Rommel, Mathias, Friedrich, Jochen
Format: Tagungsbericht
Sprache:eng
Schlagworte:
4H-SiC epitaxy
carrier lifetime
chloride assisted growth
CVD
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kallinger, Birgit
Ehlers, Christian
Berwian, Patrick
Rommel, Mathias
Friedrich, Jochen
description The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.
doi_str_mv 10.4028/www.scientific.net/MSF.778-780.210
format Conference Proceeding
fullrecord <record><control><sourceid>fraunhofer_E3A</sourceid><recordid>TN_cdi_fraunhofer_primary_oai_fraunhofer_de_N_280027</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_fraunhofer_de_N_280027</sourcerecordid><originalsourceid>FETCH-fraunhofer_primary_oai_fraunhofer_de_N_2800273</originalsourceid><addsrcrecordid>eNqdy7EOgjAUQNEuDkb9hzebUEolgdUQCYsuuDcVXuXFSklbJfy9i4Oz001OchnbZ4LnQpbpPM88dIRjJEMdHzGm57bmRVEmRSm4zMSaHZvKgg6BQsQe7t7NcQBnIA7UPSBvkpYqwImsXtAHMM7DjSZntYce39Rh2LKV0Tbg7tsNy-vTtWoS4_VrHJxBryZPT-0X5TSpH-5RXZQshZDF4c_tA3CwTrA</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>HCl assisted growth of thick 4H-SiC epilayers for bipolar devices</title><source>Fraunhofer-ePrints</source><creator>Kallinger, Birgit ; Ehlers, Christian ; Berwian, Patrick ; Rommel, Mathias ; Friedrich, Jochen</creator><creatorcontrib>Kallinger, Birgit ; Ehlers, Christian ; Berwian, Patrick ; Rommel, Mathias ; Friedrich, Jochen</creatorcontrib><description>The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.</description><identifier>DOI: 10.4028/www.scientific.net/MSF.778-780.210</identifier><language>eng</language><subject>4H-SiC epitaxy ; carrier lifetime ; chloride assisted growth ; CVD</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,315,776,4036,27837</link.rule.ids><linktorsrc>$$Uhttp://publica.fraunhofer.de/documents/N-280027.html$$EView_record_in_Fraunhofer-Gesellschaft$$FView_record_in_$$GFraunhofer-Gesellschaft$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kallinger, Birgit</creatorcontrib><creatorcontrib>Ehlers, Christian</creatorcontrib><creatorcontrib>Berwian, Patrick</creatorcontrib><creatorcontrib>Rommel, Mathias</creatorcontrib><creatorcontrib>Friedrich, Jochen</creatorcontrib><title>HCl assisted growth of thick 4H-SiC epilayers for bipolar devices</title><description>The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.</description><subject>4H-SiC epitaxy</subject><subject>carrier lifetime</subject><subject>chloride assisted growth</subject><subject>CVD</subject><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><sourceid>AFSUM</sourceid><sourceid>E3A</sourceid><recordid>eNqdy7EOgjAUQNEuDkb9hzebUEolgdUQCYsuuDcVXuXFSklbJfy9i4Oz001OchnbZ4LnQpbpPM88dIRjJEMdHzGm57bmRVEmRSm4zMSaHZvKgg6BQsQe7t7NcQBnIA7UPSBvkpYqwImsXtAHMM7DjSZntYce39Rh2LKV0Tbg7tsNy-vTtWoS4_VrHJxBryZPT-0X5TSpH-5RXZQshZDF4c_tA3CwTrA</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Kallinger, Birgit</creator><creator>Ehlers, Christian</creator><creator>Berwian, Patrick</creator><creator>Rommel, Mathias</creator><creator>Friedrich, Jochen</creator><scope>AFSUM</scope><scope>E3A</scope></search><sort><creationdate>2014</creationdate><title>HCl assisted growth of thick 4H-SiC epilayers for bipolar devices</title><author>Kallinger, Birgit ; Ehlers, Christian ; Berwian, Patrick ; Rommel, Mathias ; Friedrich, Jochen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-fraunhofer_primary_oai_fraunhofer_de_N_2800273</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>4H-SiC epitaxy</topic><topic>carrier lifetime</topic><topic>chloride assisted growth</topic><topic>CVD</topic><toplevel>online_resources</toplevel><creatorcontrib>Kallinger, Birgit</creatorcontrib><creatorcontrib>Ehlers, Christian</creatorcontrib><creatorcontrib>Berwian, Patrick</creatorcontrib><creatorcontrib>Rommel, Mathias</creatorcontrib><creatorcontrib>Friedrich, Jochen</creatorcontrib><collection>Fraunhofer-ePrints - FT</collection><collection>Fraunhofer-ePrints</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kallinger, Birgit</au><au>Ehlers, Christian</au><au>Berwian, Patrick</au><au>Rommel, Mathias</au><au>Friedrich, Jochen</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>HCl assisted growth of thick 4H-SiC epilayers for bipolar devices</atitle><date>2014</date><risdate>2014</risdate><abstract>The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.</abstract><doi>10.4028/www.scientific.net/MSF.778-780.210</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier DOI: 10.4028/www.scientific.net/MSF.778-780.210
ispartof
issn
language eng
recordid cdi_fraunhofer_primary_oai_fraunhofer_de_N_280027
source Fraunhofer-ePrints
subjects 4H-SiC epitaxy
carrier lifetime
chloride assisted growth
CVD
title HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T09%3A11%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-fraunhofer_E3A&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=HCl%20assisted%20growth%20of%20thick%204H-SiC%20epilayers%20for%20bipolar%20devices&rft.au=Kallinger,%20Birgit&rft.date=2014&rft_id=info:doi/10.4028/www.scientific.net/MSF.778-780.210&rft_dat=%3Cfraunhofer_E3A%3Eoai_fraunhofer_de_N_280027%3C/fraunhofer_E3A%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true