Compensation of mask induced aberrations by projector wavefront control

Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an aberration like impact on the imaging performance of lithographic projection systems. This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask...

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Hauptverfasser:	Evanschitzky, Peter, Shao, Feng, Fühner, Tim, Erdmann, Andreas
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	lithography simulation mask topography effect process optimization wavefront aberrations
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creator	Evanschitzky, Peter Shao, Feng Fühner, Tim Erdmann, Andreas
description	Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an aberration like impact on the imaging performance of lithographic projection systems. This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask induced aberration effects. It is shown that proper adjustment of the wavefront results in significant reduction of best focus differences between different features.
doi_str_mv	10.1117/12.879207
format	Conference Proceeding
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This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask induced aberration effects. It is shown that proper adjustment of the wavefront results in significant reduction of best focus differences between different features.</description><identifier>DOI: 10.1117/12.879207</identifier><language>eng</language><subject>lithography simulation ; mask topography effect ; process optimization ; wavefront aberrations</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,315,777,4036,27841</link.rule.ids><linktorsrc>$$Uhttp://publica.fraunhofer.de/documents/N-189808.html$$EView_record_in_Fraunhofer-Gesellschaft$$FView_record_in_$$GFraunhofer-Gesellschaft$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Evanschitzky, Peter</creatorcontrib><creatorcontrib>Shao, Feng</creatorcontrib><creatorcontrib>Fühner, Tim</creatorcontrib><creatorcontrib>Erdmann, Andreas</creatorcontrib><title>Compensation of mask induced aberrations by projector wavefront control</title><description>Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an aberration like impact on the imaging performance of lithographic projection systems. 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This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask induced aberration effects. It is shown that proper adjustment of the wavefront results in significant reduction of best focus differences between different features.</abstract><doi>10.1117/12.879207</doi><oa>free_for_read</oa></addata></record>
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identifier	DOI: 10.1117/12.879207
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subjects	lithography simulation mask topography effect process optimization wavefront aberrations
title	Compensation of mask induced aberrations by projector wavefront control
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