High temperature stability of nitride-based power HEMTs

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Schlagworte:	(LCSH) Reliability: Engineering (LCSH)Modulation-doped field-effect transistors Engineering and mechanical engineering HEMP HEMT Ingenieurwissenschaften und Maschinenbau
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subjects	(LCSH) Reliability: Engineering (LCSH)Modulation-doped field-effect transistors Engineering and mechanical engineering HEMP HEMT Ingenieurwissenschaften und Maschinenbau
title	High temperature stability of nitride-based power HEMTs
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