A high-voltage multi-purpose on-the-fly reconfigurable half-bridge gate driver for GaN HEMTs in 0.18-μm HV SOI CMOS technology

Nowadays, the use of Gallium Nitride (GaN) power transistors in power electronics is common, due to higher switching speeds, lower on-resistance and smaller size compared to silicon counterparts. With superior figures of merit, power converters utilizing GaN devices can operate at high switching fre...

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Bibliographische Detailangaben

1. Verfasser:	Ly, Nam
Format:	Dissertation
Sprache:	eng
Schlagworte:	aérospatiale CMOS demi-pont décalage de niveau GaN pilote de grille reconfigurable
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