Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon
Carbon is deposited on a substrate through plasma enhanced chemical vapor deposition of a decomposable processor containing a seed material additive. The seed material is a hydrocarbon having a high concentration of sp tetrahedrally-coordinated carbon. The seed material provides a template for the r...
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creator | WAGNER, JOHN RALPH, JR |
description | Carbon is deposited on a substrate through plasma enhanced chemical vapor deposition of a decomposable processor containing a seed material additive. The seed material is a hydrocarbon having a high concentration of sp tetrahedrally-coordinated carbon. The seed material provides a template for the replication of sp tetrahedrally-coordinated carbon atoms in the deposited amorphous carbon coating. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_ZA954295B</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ZA954295B</sourcerecordid><originalsourceid>FETCH-epo_espacenet_ZA954295B3</originalsourceid><addsrcrecordid>eNqFzDEKwkAQBdA0FqJeQeYCadQUKU1QPICVCGGyO0sG1p0wOyDe3iXYW30-__PW1bNHHSXVTtDIw4iqTAqB4yvDm20CTk4JcxmdJEfJFI0lgQQwKmUirxjjpxCintPiuEXdVquAMdPul5tqf73c-1tNswyUZywc2fA4t83p0Dbd8e_hC6nLO4Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon</title><source>esp@cenet</source><creator>WAGNER, JOHN RALPH, JR</creator><creatorcontrib>WAGNER, JOHN RALPH, JR</creatorcontrib><description>Carbon is deposited on a substrate through plasma enhanced chemical vapor deposition of a decomposable processor containing a seed material additive. The seed material is a hydrocarbon having a high concentration of sp tetrahedrally-coordinated carbon. The seed material provides a template for the replication of sp tetrahedrally-coordinated carbon atoms in the deposited amorphous carbon coating.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G ; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS BASED THEREON ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; GENERAL PROCESSES OF COMPOUNDING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; ORGANIC MACROMOLECULAR COMPOUNDS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WORKING-UP</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961125&DB=EPODOC&CC=ZA&NR=954295B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961125&DB=EPODOC&CC=ZA&NR=954295B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WAGNER, JOHN RALPH, JR</creatorcontrib><title>Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon</title><description>Carbon is deposited on a substrate through plasma enhanced chemical vapor deposition of a decomposable processor containing a seed material additive. The seed material is a hydrocarbon having a high concentration of sp tetrahedrally-coordinated carbon. The seed material provides a template for the replication of sp tetrahedrally-coordinated carbon atoms in the deposited amorphous carbon coating.</description><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</subject><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>GENERAL PROCESSES OF COMPOUNDING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFzDEKwkAQBdA0FqJeQeYCadQUKU1QPICVCGGyO0sG1p0wOyDe3iXYW30-__PW1bNHHSXVTtDIw4iqTAqB4yvDm20CTk4JcxmdJEfJFI0lgQQwKmUirxjjpxCintPiuEXdVquAMdPul5tqf73c-1tNswyUZywc2fA4t83p0Dbd8e_hC6nLO4Q</recordid><startdate>19961125</startdate><enddate>19961125</enddate><creator>WAGNER, JOHN RALPH, JR</creator><scope>EVB</scope></search><sort><creationdate>19961125</creationdate><title>Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon</title><author>WAGNER, JOHN RALPH, JR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_ZA954295B3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</topic><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>GENERAL PROCESSES OF COMPOUNDING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>WAGNER, JOHN RALPH, JR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WAGNER, JOHN RALPH, JR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon</title><date>1996-11-25</date><risdate>1996</risdate><abstract>Carbon is deposited on a substrate through plasma enhanced chemical vapor deposition of a decomposable processor containing a seed material additive. The seed material is a hydrocarbon having a high concentration of sp tetrahedrally-coordinated carbon. The seed material provides a template for the replication of sp tetrahedrally-coordinated carbon atoms in the deposited amorphous carbon coating.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL GENERAL PROCESSES OF COMPOUNDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS ORGANIC MACROMOLECULAR COMPOUNDS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING-UP |
title | Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon |
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