Isitopic diamond coated products and their production
Broadly, the present invention is directed to a diamond product comprising a core of diamond containing at least about 1 wt-% C and an epitaxial diamond coating on said core containing at least 1 wt-% less C than is contained is said diamond core. The diamond core will have a lattice parameter that...
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| creator | JEROME JOHNSON TIEMANN |
| description | Broadly, the present invention is directed to a diamond product comprising a core of diamond containing at least about 1 wt-% C and an epitaxial diamond coating on said core containing at least 1 wt-% less C than is contained is said diamond core. The diamond core will have a lattice parameter that is smaller that the lattice parameter of the diamond coating. When the coating is forced to grow epitaxially so that it must have the same lattice constant as the diamond core, the coating will be placed under compression. Since C diamond has the smallest lattice parameter known and the lattice parameter of diamond is a function of isotopic composition, the diamond core should contain more C than is contained in the coating in order for the coating to be placed under compression. Accordingly, the diamond core can be composed of natural or synthetic diamond having a natural isotopic composition and the coating can be C or C. Alternatively, the core can be C and the coating C. When mixtures of isotopes comprise the core and/or coating, their composition should vary by at least 1 wt-% C with the higher incidence of C isotope being located in the core. |
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The diamond core will have a lattice parameter that is smaller that the lattice parameter of the diamond coating. When the coating is forced to grow epitaxially so that it must have the same lattice constant as the diamond core, the coating will be placed under compression. Since C diamond has the smallest lattice parameter known and the lattice parameter of diamond is a function of isotopic composition, the diamond core should contain more C than is contained in the coating in order for the coating to be placed under compression. Accordingly, the diamond core can be composed of natural or synthetic diamond having a natural isotopic composition and the coating can be C or C. Alternatively, the core can be C and the coating C. When mixtures of isotopes comprise the core and/or coating, their composition should vary by at least 1 wt-% C with the higher incidence of C isotope being located in the core.</description><edition>5</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL ; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING ; MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL ; METALLURGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; PUNCHING METAL ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR RELEVANT APPARATUS ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930525&DB=EPODOC&CC=ZA&NR=926288B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930525&DB=EPODOC&CC=ZA&NR=926288B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JEROME JOHNSON TIEMANN</creatorcontrib><title>Isitopic diamond coated products and their production</title><description>Broadly, the present invention is directed to a diamond product comprising a core of diamond containing at least about 1 wt-% C and an epitaxial diamond coating on said core containing at least 1 wt-% less C than is contained is said diamond core. The diamond core will have a lattice parameter that is smaller that the lattice parameter of the diamond coating. When the coating is forced to grow epitaxially so that it must have the same lattice constant as the diamond core, the coating will be placed under compression. Since C diamond has the smallest lattice parameter known and the lattice parameter of diamond is a function of isotopic composition, the diamond core should contain more C than is contained in the coating in order for the coating to be placed under compression. Accordingly, the diamond core can be composed of natural or synthetic diamond having a natural isotopic composition and the coating can be C or C. Alternatively, the core can be C and the coating C. When mixtures of isotopes comprise the core and/or coating, their composition should vary by at least 1 wt-% C with the higher incidence of C isotope being located in the core.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL</subject><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING</subject><subject>MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>PUNCHING METAL</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>THEIR RELEVANT APPARATUS</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1LM4syS_ITFZIyUzMzc9LUUjOTyxJTVEoKMpPKU0uKVZIBIqVZKRmFsGEMvPzeBhY0xJzilN5oTQ3g5yba4izh25qQX58anFBYnJqXmpJfJSjpZGZkYWFkzFBBQCFJyxs</recordid><startdate>19930525</startdate><enddate>19930525</enddate><creator>JEROME JOHNSON TIEMANN</creator><scope>EVB</scope></search><sort><creationdate>19930525</creationdate><title>Isitopic diamond coated products and their production</title><author>JEROME JOHNSON TIEMANN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_ZA926288B3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL</topic><topic>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING</topic><topic>MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>PUNCHING METAL</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>THEIR RELEVANT APPARATUS</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>JEROME JOHNSON TIEMANN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JEROME JOHNSON TIEMANN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Isitopic diamond coated products and their production</title><date>1993-05-25</date><risdate>1993</risdate><abstract>Broadly, the present invention is directed to a diamond product comprising a core of diamond containing at least about 1 wt-% C and an epitaxial diamond coating on said core containing at least 1 wt-% less C than is contained is said diamond core. The diamond core will have a lattice parameter that is smaller that the lattice parameter of the diamond coating. When the coating is forced to grow epitaxially so that it must have the same lattice constant as the diamond core, the coating will be placed under compression. Since C diamond has the smallest lattice parameter known and the lattice parameter of diamond is a function of isotopic composition, the diamond core should contain more C than is contained in the coating in order for the coating to be placed under compression. Accordingly, the diamond core can be composed of natural or synthetic diamond having a natural isotopic composition and the coating can be C or C. Alternatively, the core can be C and the coating C. When mixtures of isotopes comprise the core and/or coating, their composition should vary by at least 1 wt-% C with the higher incidence of C isotope being located in the core.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE PUNCHING METAL REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Isitopic diamond coated products and their production |
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