SEMICONDUCTOR LASERS
A "big spot" semiconductor laser has a passive modal spot size transformer (2) formed integrally in tandem with the active region (1) of the laser. The passive transformer has a layer structure (5, 6) that supports a restricted set of modes and is designed such that, at the laser frequency...
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| creator | THOMPSON, GEORGE, HORACE, BROOKE |
| description | A "big spot" semiconductor laser has a passive modal spot size transformer (2) formed integrally in tandem with the active region (1) of the laser. The passive transformer has a layer structure (5, 6) that supports a restricted set of modes and is designed such that, at the laser frequency, its length provides a phase slippage of pi between modes of adjacent order.
Cette invention concerne un laser à semiconducteur et à grand point, lequel comporte un transformateur (2) passif et modal de la taille du point. Ce transformateur est formé d'une seule pièce et se trouve en tandem avec la région active (1) du laser. Le transformateur passif possède une structure stratifiée (5, 6) qui supporte un ensemble de modes limité, et qui est conçue de manière à ce que sa longueur produise, à la fréquence laser, un glissement de phase égal à pi entre des modes d'ordre adjacent. |
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Cette invention concerne un laser à semiconducteur et à grand point, lequel comporte un transformateur (2) passif et modal de la taille du point. Ce transformateur est formé d'une seule pièce et se trouve en tandem avec la région active (1) du laser. Le transformateur passif possède une structure stratifiée (5, 6) qui supporte un ensemble de modes limité, et qui est conçue de manière à ce que sa longueur produise, à la fréquence laser, un glissement de phase égal à pi entre des modes d'ordre adjacent.</description><edition>6</edition><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970731&DB=EPODOC&CC=WO&NR=9727651A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970731&DB=EPODOC&CC=WO&NR=9727651A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>THOMPSON, GEORGE, HORACE, BROOKE</creatorcontrib><title>SEMICONDUCTOR LASERS</title><description>A "big spot" semiconductor laser has a passive modal spot size transformer (2) formed integrally in tandem with the active region (1) of the laser. The passive transformer has a layer structure (5, 6) that supports a restricted set of modes and is designed such that, at the laser frequency, its length provides a phase slippage of pi between modes of adjacent order.
Cette invention concerne un laser à semiconducteur et à grand point, lequel comporte un transformateur (2) passif et modal de la taille du point. Ce transformateur est formé d'une seule pièce et se trouve en tandem avec la région active (1) du laser. Le transformateur passif possède une structure stratifiée (5, 6) qui supporte un ensemble de modes limité, et qui est conçue de manière à ce que sa longueur produise, à la fréquence laser, un glissement de phase égal à pi entre des modes d'ordre adjacent.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUvBxDHYNCuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfHh_pbmRuZmpoaOhsZEKAEAVqQemA</recordid><startdate>19970731</startdate><enddate>19970731</enddate><creator>THOMPSON, GEORGE, HORACE, BROOKE</creator><scope>EVB</scope></search><sort><creationdate>19970731</creationdate><title>SEMICONDUCTOR LASERS</title><author>THOMPSON, GEORGE, HORACE, BROOKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO9727651A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>1997</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>THOMPSON, GEORGE, HORACE, BROOKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>THOMPSON, GEORGE, HORACE, BROOKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LASERS</title><date>1997-07-31</date><risdate>1997</risdate><abstract>A "big spot" semiconductor laser has a passive modal spot size transformer (2) formed integrally in tandem with the active region (1) of the laser. The passive transformer has a layer structure (5, 6) that supports a restricted set of modes and is designed such that, at the laser frequency, its length provides a phase slippage of pi between modes of adjacent order.
Cette invention concerne un laser à semiconducteur et à grand point, lequel comporte un transformateur (2) passif et modal de la taille du point. Ce transformateur est formé d'une seule pièce et se trouve en tandem avec la région active (1) du laser. Le transformateur passif possède une structure stratifiée (5, 6) qui supporte un ensemble de modes limité, et qui est conçue de manière à ce que sa longueur produise, à la fréquence laser, un glissement de phase égal à pi entre des modes d'ordre adjacent.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS |
| title | SEMICONDUCTOR LASERS |
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