APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER
An apparatus for thermal treatment of a wafer comprising a vacuum chamber (10) with a heater block (20) positioned in the vacuum chamber (10) and a clamp means (31) which presses against the wafer positioned on the heater block (20) with the weight of the clamp (31). A vacuum means (60) forms a vacu...
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| creator | SHIN, JUNG-HO CHOI, CHANG-HWAN LEE, HUENG-JIK KYUNG, HYUN-SU CHOI, WON-SONG KIM, SEK-YOUNG |
| description | An apparatus for thermal treatment of a wafer comprising a vacuum chamber (10) with a heater block (20) positioned in the vacuum chamber (10) and a clamp means (31) which presses against the wafer positioned on the heater block (20) with the weight of the clamp (31). A vacuum means (60) forms a vacuum in the chamber (10) and a gas supply means (100) supplies gas into the chamber (10) to provide a uniform temperature. A wafer supply means (50) supplies the wafer to the clamp means (31) for heat treatment.
Appareil de traitement thermique d'une tranche caractérisé en ce qu'il comprend une chambre de vide (10) dans laquelle est positonné un bloc chauffant (20), ainsi qu'un moyen de serrage (31) destiné à exercer une pression contre la tranche positionnée sur le bloc chauffant (20) par le poids dudit moyen de serrage (31). Un dispositif de vide (60) forme un vide dans la chambre de vide (10) et un moyen d'alimentation (100) en gaz alimente la chambre (10) en gaz afin de produire une température uniforme. Un moyen (50) d'alimentation en tranches achemine la tranche jusqu'au moyen de serrage (31) afin de procéder au traitement thermique. |
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Appareil de traitement thermique d'une tranche caractérisé en ce qu'il comprend une chambre de vide (10) dans laquelle est positonné un bloc chauffant (20), ainsi qu'un moyen de serrage (31) destiné à exercer une pression contre la tranche positionnée sur le bloc chauffant (20) par le poids dudit moyen de serrage (31). Un dispositif de vide (60) forme un vide dans la chambre de vide (10) et un moyen d'alimentation (100) en gaz alimente la chambre (10) en gaz afin de produire une température uniforme. Un moyen (50) d'alimentation en tranches achemine la tranche jusqu'au moyen de serrage (31) afin de procéder au traitement thermique.</description><edition>6</edition><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951109&DB=EPODOC&CC=WO&NR=9530121A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951109&DB=EPODOC&CC=WO&NR=9530121A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIN, JUNG-HO</creatorcontrib><creatorcontrib>CHOI, CHANG-HWAN</creatorcontrib><creatorcontrib>LEE, HUENG-JIK</creatorcontrib><creatorcontrib>KYUNG, HYUN-SU</creatorcontrib><creatorcontrib>CHOI, WON-SONG</creatorcontrib><creatorcontrib>KIM, SEK-YOUNG</creatorcontrib><title>APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER</title><description>An apparatus for thermal treatment of a wafer comprising a vacuum chamber (10) with a heater block (20) positioned in the vacuum chamber (10) and a clamp means (31) which presses against the wafer positioned on the heater block (20) with the weight of the clamp (31). A vacuum means (60) forms a vacuum in the chamber (10) and a gas supply means (100) supplies gas into the chamber (10) to provide a uniform temperature. A wafer supply means (50) supplies the wafer to the clamp means (31) for heat treatment.
Appareil de traitement thermique d'une tranche caractérisé en ce qu'il comprend une chambre de vide (10) dans laquelle est positonné un bloc chauffant (20), ainsi qu'un moyen de serrage (31) destiné à exercer une pression contre la tranche positionnée sur le bloc chauffant (20) par le poids dudit moyen de serrage (31). Un dispositif de vide (60) forme un vide dans la chambre de vide (10) et un moyen d'alimentation (100) en gaz alimente la chambre (10) en gaz afin de produire une température uniforme. Un moyen (50) d'alimentation en tranches achemine la tranche jusqu'au moyen de serrage (31) afin de procéder au traitement thermique.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDByDAhwDHIMCQ1WcPMPUgjxcA3ydfRRCAlydQzxdfULUfB3Awp6-im4efr4KoQ7urkG8TCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSS-HB_S1NjA0MjQ0dDYyKUAAAr1yZr</recordid><startdate>19951109</startdate><enddate>19951109</enddate><creator>SHIN, JUNG-HO</creator><creator>CHOI, CHANG-HWAN</creator><creator>LEE, HUENG-JIK</creator><creator>KYUNG, HYUN-SU</creator><creator>CHOI, WON-SONG</creator><creator>KIM, SEK-YOUNG</creator><scope>EVB</scope></search><sort><creationdate>19951109</creationdate><title>APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER</title><author>SHIN, JUNG-HO ; CHOI, CHANG-HWAN ; LEE, HUENG-JIK ; KYUNG, HYUN-SU ; CHOI, WON-SONG ; KIM, SEK-YOUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO9530121A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN, JUNG-HO</creatorcontrib><creatorcontrib>CHOI, CHANG-HWAN</creatorcontrib><creatorcontrib>LEE, HUENG-JIK</creatorcontrib><creatorcontrib>KYUNG, HYUN-SU</creatorcontrib><creatorcontrib>CHOI, WON-SONG</creatorcontrib><creatorcontrib>KIM, SEK-YOUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN, JUNG-HO</au><au>CHOI, CHANG-HWAN</au><au>LEE, HUENG-JIK</au><au>KYUNG, HYUN-SU</au><au>CHOI, WON-SONG</au><au>KIM, SEK-YOUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER</title><date>1995-11-09</date><risdate>1995</risdate><abstract>An apparatus for thermal treatment of a wafer comprising a vacuum chamber (10) with a heater block (20) positioned in the vacuum chamber (10) and a clamp means (31) which presses against the wafer positioned on the heater block (20) with the weight of the clamp (31). A vacuum means (60) forms a vacuum in the chamber (10) and a gas supply means (100) supplies gas into the chamber (10) to provide a uniform temperature. A wafer supply means (50) supplies the wafer to the clamp means (31) for heat treatment.
Appareil de traitement thermique d'une tranche caractérisé en ce qu'il comprend une chambre de vide (10) dans laquelle est positonné un bloc chauffant (20), ainsi qu'un moyen de serrage (31) destiné à exercer une pression contre la tranche positionnée sur le bloc chauffant (20) par le poids dudit moyen de serrage (31). Un dispositif de vide (60) forme un vide dans la chambre de vide (10) et un moyen d'alimentation (100) en gaz alimente la chambre (10) en gaz afin de produire une température uniforme. Un moyen (50) d'alimentation en tranches achemine la tranche jusqu'au moyen de serrage (31) afin de procéder au traitement thermique.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER |
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