A HIGH RELIABILITY NON-VOLATILE MEMORY CIRCUIT AND STRUCTURE

A high reliability, high density, non-volatile memory circuit (10) is disclosed. The circuit comprises a storage cell (19) which has a first MOS enhancement type transistor (12), a second MOS enhancement type transistor (14), a tunnel terminal device (26) and a capacitor (28). The first MOS enhancem...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NOLAN, JOSEPH, G
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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