SEMICONDUCTOR DEVICE

A semiconductor device 1 comprises: a substrate 10; N first electrodes 22 provided above the substrate 10 (where N is an integer of 2 or more); a first dielectric film 23 provided above the N first electrodes 22; M second electrodes 24 provided above the N first electrodes 22 with the first dielectric film 23 therebetween (where M is an integer of 3 or more and satisfies M>N); a first protective layer 26 covering the N first electrodes 22 and the M second electrodes 24; three or more external electrodes 27 penetrating the first protective layer 26; and a second protective layer 29 covering an external electrode 27 excluding two of the external electrodes 27 among the three or more of the external electrodes 27. At least one of the second electrodes 24 is disposed above each of the first electrodes 22. M capacitor elements CAP1, CAP2, and CAP3 are constituted by the N first electrodes 22, the first dielectric film 23, and the M second electrodes 24. M capacitor elements CAP1, CAP2 and CAP3 are electrically connected in series. Among the M capacitor elements CAP1, CAP2 and CAP3, two of the capacitor elements CAP1 and CAP2 having two second electrodes 24A and 24B disposed on the same first electrode 22A are electrically connected in series. Two of the external electrodes 27 that are not covered with the second protective layer 29 constitute two terminal electrodes 27A and 27B which are electrically connected to the two of the capacitor elements CAP1 and CAP3, respectively, among the M capacitor elements CAP1, CAP2 and CAP3. Among the M capacitor elements CAP1, CAP2 and CAP3, two of the capacitor elements CAP2 and CAP3 that have two of the second electrodes 24B and 24C disposed above different first electrodes 22A and 22B are electrically connected in series by an external electrode 27C which does not constitute the two terminal electrodes 27A and 27B. The external electrode 27C which does not constitute the two terminal electrodes 27A and 27B is covered with the second protective layer 29. Un dispositif à semi-conducteur 1 comprend : un substrat 10 ; N premières électrodes 22 disposées au-dessus du substrat 10 (N étant un nombre entier supérieur ou égal à 2) ; un premier film diélectrique 23 disposé au-dessus des N premières électrodes 22 ; M secondes électrodes 24 disposées au-dessus des N premières électrodes 22, le premier film diélectrique 23 se trouvant entre celles-ci (M étant un nombre entier supérieur ou égal à 3 et satisfaisant à M > N) ; une premièr