METHOD FOR FORMING TITANIUM NITRIDE THIN FILM AND METHOD FOR FORMING ELECTRODE

A method for forming a titanium nitride thin film according to an embodiment of the present invention comprises the steps of: preparing a substrate; forming a titanium (Ti)-containing layer by spraying a precursor containing titanium (Ti) toward the substrate; and forming a titanium nitride thin fil...

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Bibliographische Detailangaben
Hauptverfasser:	JEON, Jeong Soo, HWANG, Chul Joo, JUNG, Hyo Sub, KO, Yeo Na, OH, Tae Heon, YOO, Jin Hyuk, LEE, Da Eun
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for forming a titanium nitride thin film according to an embodiment of the present invention comprises the steps of: preparing a substrate; forming a titanium (Ti)-containing layer by spraying a precursor containing titanium (Ti) toward the substrate; and forming a titanium nitride thin film by spraying a reactant gas containing nitrogen (N) toward the substrate, wherein the precursor containing titanium (Ti) does not contain chlorine (Cl). Therefore, according to embodiments of the present invention, a titanium nitride thin film from which impurities are removed can be formed. Accordingly, the resistivity of the titanium nitride thin film can be lowered, and the electrical characteristics thereof can be improved. Un procédé de formation d'une couche mince de nitrure de titane selon un mode de réalisation de la présente invention comprend les étapes consistant à : préparer un substrat ; former une couche contenant du titane (Ti) par pulvérisation d'un précurseur contenant du titane (Ti) vers le substrat ; et former une couche mince de nitrure de titane par pulvérisation d'un gaz réactif contenant de l'azote (N) vers le substrat, le précurseur contenant du titane (Ti) ne contenant pas de chlore (Cl). Par conséquent, selon des modes de réalisation de la présente invention, une couche mince de nitrure de titane à partir duquel des impuretés sont éliminées peut être formée. Par conséquent, la résistivité de la couche mince de nitrure de titane peut être réduite, et ses caractéristiques électriques peuvent être améliorées. 본 발명의 실시예에 따른 질화 티타늄 박막의 형성 방법은, 기판을 준비하는 단계, 티타늄(Ti)을 포함하는 전구체(precursor)를 기판을 향해 분사하여 티타늄(Ti) 함유층을 형성하는 단계 및 질소(N)가 포함된 리액턴트 가스를 기판을 향해 분사하여 질화 티타늄 박막을 형성하는 단계를 포함하고, 티타늄(Ti)을 포함하는 전구체는 염소(Cl)를 포함하지 않는다. 따라서, 본 발명의 실시예들에 의하면, 불순물이 제거된 질화 티타늄 박막을 형성할 수 있다. 이에, 질화 티타늄 박막의 비저항을 낮출 수 있고, 전기적 특성을 향상시킬 수 있다.