SILICON CHANNEL FOR BONDED 3D NAND DEVICES
A method for manufacturing a memory device includes depositing a seed layer in a memory hole extending through a memory stack. The seed layer includes particles, such as silicon particles. The seed layer is etched to produce etched particles. The etched particles act as nuclei for the growth of a cr...
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| creator | PRANATHARTHIHARAN, Balasubramanian LAZKANI, Houssam CHEN, Hsueh Chung KANG, Chang Seok JUNG, In Soo GAIRE, Raman |
| description | A method for manufacturing a memory device includes depositing a seed layer in a memory hole extending through a memory stack. The seed layer includes particles, such as silicon particles. The seed layer is etched to produce etched particles. The etched particles act as nuclei for the growth of a crystalline channel material in the memory hole.
Un procédé de fabrication d'un dispositif de mémoire comprend le dépôt d'une couche germe dans un trou de mémoire s'étendant à travers une pile de mémoire. La couche germe comprend des particules, telles que des particules de silicium. La couche germe est gravée pour produire des particules gravées. Les particules gravées agissent en tant que noyaux pour la croissance d'un matériau de canal cristallin dans le trou de mémoire. |
| format | Patent |
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Un procédé de fabrication d'un dispositif de mémoire comprend le dépôt d'une couche germe dans un trou de mémoire s'étendant à travers une pile de mémoire. La couche germe comprend des particules, telles que des particules de silicium. La couche germe est gravée pour produire des particules gravées. Les particules gravées agissent en tant que noyaux pour la croissance d'un matériau de canal cristallin dans le trou de mémoire.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SILICON CHANNEL FOR BONDED 3D NAND DEVICES |
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