CYCLODISILAZANE COMPOUND, COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM COMPRISING SAME, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING SAME

The present invention relates to a cyclodisilazane compound, a composition for depositing a silicon-containing thin film comprising same, and a method for manufacturing a silicon-containing thin film using same, wherein the cyclodisilazane compound according to the present invention is a thermally s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SON, Seung, LIM, Haeng-Don, CHO, Yu Jin, RYU, Jiho, LEE, Gyun Sang, JANG, Se Jin, PARK, Joong Jin, KIM, Sung Gi
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to a cyclodisilazane compound, a composition for depositing a silicon-containing thin film comprising same, and a method for manufacturing a silicon-containing thin film using same, wherein the cyclodisilazane compound according to the present invention is a thermally stable and highly reactive and volatile compound and is in a liquid state at room temperature and at a pressure that allows for easy handling, and can form a high-purity silicon-containing thin film having excellent physical and electrical properties through various deposition methods. La présente invention concerne un composé de cyclodisilazane, une composition pour déposer une couche mince contenant du silicium le comprenant, et un procédé de fabrication d'une couche mince contenant du silicium l'utilisant, le composé de cyclodisilazane selon la présente invention étant un composé stable thermiquement et hautement réactif et volatil et étant dans un état liquide à température ambiante et à une pression qui permet une manipulation facile, et pouvant former une couche mince contenant du silicium de haute pureté ayant d'excellentes propriétés physiques et électriques par l'intermédiaire de divers procédés de dépôt. 본 발명은 사이클로다이실라잔 화합물, 이를 포함하는 실리콘 함유 박막 증착용 조성물 및 이를 이용한 실리콘 함유 박막을 제조하는 방법에 관한 것으로, 본 발명에 따른 사이클로다이실라잔 화합물은 열적으로 안정하고 휘발성 및 반응성이 강한 화합물로 실온 및 용이한 취급이 가능한 압력에서 액체 형태의 화합물로 다양한 증착 방법으로 물리적, 전기적 특성이 우수하면서도 고순도의 실리콘 함유 박막을 형성할 수 있다.