FLUORESCENCE MODE FOR WORKPIECE INSPECTION
A beam of light is directed at a workpiece that includes a low-k dielectric material, which causes fluorescence emission from the low-k dielectric material. The workpiece is imaged during fluorescence emission. The imaging can use an optical filter in an imaging path of the beam of light that select...
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| creator | JAGADESAN, Pradeepkumar SHAN, Junjun CHEN, Grace H WANG, Xuezhen |
| description | A beam of light is directed at a workpiece that includes a low-k dielectric material, which causes fluorescence emission from the low-k dielectric material. The workpiece is imaged during fluorescence emission. The imaging can use an optical filter in an imaging path of the beam of light that selects at least one wavelength from 300 nm to 900 nm.
Un faisceau de lumière est dirigé sur une pièce qui comprend un matériau diélectrique à faible k, ce qui provoque une émission de fluorescence à partir du matériau diélectrique à faible k. Une image de la pièce est faite pendant l'émission de fluorescence. L'imagerie peut faire appel à un filtre optique sur un trajet d'imagerie du faisceau de lumière qui sélectionne au moins une longueur d'onde de 300 nm à 900 nm. |
| format | Patent |
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Un faisceau de lumière est dirigé sur une pièce qui comprend un matériau diélectrique à faible k, ce qui provoque une émission de fluorescence à partir du matériau diélectrique à faible k. Une image de la pièce est faite pendant l'émission de fluorescence. L'imagerie peut faire appel à un filtre optique sur un trajet d'imagerie du faisceau de lumière qui sélectionne au moins une longueur d'onde de 300 nm à 900 nm.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240926&DB=EPODOC&CC=WO&NR=2024197107A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240926&DB=EPODOC&CC=WO&NR=2024197107A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JAGADESAN, Pradeepkumar</creatorcontrib><creatorcontrib>SHAN, Junjun</creatorcontrib><creatorcontrib>CHEN, Grace H</creatorcontrib><creatorcontrib>WANG, Xuezhen</creatorcontrib><title>FLUORESCENCE MODE FOR WORKPIECE INSPECTION</title><description>A beam of light is directed at a workpiece that includes a low-k dielectric material, which causes fluorescence emission from the low-k dielectric material. The workpiece is imaged during fluorescence emission. The imaging can use an optical filter in an imaging path of the beam of light that selects at least one wavelength from 300 nm to 900 nm.
Un faisceau de lumière est dirigé sur une pièce qui comprend un matériau diélectrique à faible k, ce qui provoque une émission de fluorescence à partir du matériau diélectrique à faible k. Une image de la pièce est faite pendant l'émission de fluorescence. L'imagerie peut faire appel à un filtre optique sur un trajet d'imagerie du faisceau de lumière qui sélectionne au moins une longueur d'onde de 300 nm à 900 nm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBy8wn1D3INdnb1c3ZV8PV3cVVw8w9SCPcP8g7wdAUKefoFB7g6h3j6-_EwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvhwfyMDIxNDS3NDA3NHQ2PiVAEA8Nslsg</recordid><startdate>20240926</startdate><enddate>20240926</enddate><creator>JAGADESAN, Pradeepkumar</creator><creator>SHAN, Junjun</creator><creator>CHEN, Grace H</creator><creator>WANG, Xuezhen</creator><scope>EVB</scope></search><sort><creationdate>20240926</creationdate><title>FLUORESCENCE MODE FOR WORKPIECE INSPECTION</title><author>JAGADESAN, Pradeepkumar ; SHAN, Junjun ; CHEN, Grace H ; WANG, Xuezhen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2024197107A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>JAGADESAN, Pradeepkumar</creatorcontrib><creatorcontrib>SHAN, Junjun</creatorcontrib><creatorcontrib>CHEN, Grace H</creatorcontrib><creatorcontrib>WANG, Xuezhen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JAGADESAN, Pradeepkumar</au><au>SHAN, Junjun</au><au>CHEN, Grace H</au><au>WANG, Xuezhen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FLUORESCENCE MODE FOR WORKPIECE INSPECTION</title><date>2024-09-26</date><risdate>2024</risdate><abstract>A beam of light is directed at a workpiece that includes a low-k dielectric material, which causes fluorescence emission from the low-k dielectric material. The workpiece is imaged during fluorescence emission. The imaging can use an optical filter in an imaging path of the beam of light that selects at least one wavelength from 300 nm to 900 nm.
Un faisceau de lumière est dirigé sur une pièce qui comprend un matériau diélectrique à faible k, ce qui provoque une émission de fluorescence à partir du matériau diélectrique à faible k. Une image de la pièce est faite pendant l'émission de fluorescence. L'imagerie peut faire appel à un filtre optique sur un trajet d'imagerie du faisceau de lumière qui sélectionne au moins une longueur d'onde de 300 nm à 900 nm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | FLUORESCENCE MODE FOR WORKPIECE INSPECTION |
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