METAL DOPED CARBON NON-CONFORMAL DEPOSITION
Methods and apparatuses for forming non-conformal metal-doped films on patterned semiconductor substrates to facilitate deeper etching of features are provided. Selective deposition and etch back of a tungsten-doped carbide film can be tuned to configure desired shapes. Shapes with rounded profiles...
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| creator | REDDY, Kapu Sirish BHADAURIYA, Sonal PUTHENKOVILAKAM, Ragesh |
| description | Methods and apparatuses for forming non-conformal metal-doped films on patterned semiconductor substrates to facilitate deeper etching of features are provided. Selective deposition and etch back of a tungsten-doped carbide film can be tuned to configure desired shapes. Shapes with rounded profiles such as helmet-shaped films may be laid over the patterned mask layer, providing selectivity benefits.
La présente invention concerne des procédés et des appareils pour former des films dopés au métal non conformes sur des substrats semi-conducteurs à motifs pour faciliter une gravure plus profonde de caractéristiques. Un dépôt sélectif et une gravure en retrait d'un film de carbure dopé au tungstène peuvent être réglés pour configurer des formes souhaitées. Des formes à profils arrondis, telles que des films en forme de casque, peuvent être posées sur la couche de masque à motifs, ce qui permet d'obtenir des avantages en termes de sélectivité. |
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La présente invention concerne des procédés et des appareils pour former des films dopés au métal non conformes sur des substrats semi-conducteurs à motifs pour faciliter une gravure plus profonde de caractéristiques. Un dépôt sélectif et une gravure en retrait d'un film de carbure dopé au tungstène peuvent être réglés pour configurer des formes souhaitées. Des formes à profils arrondis, telles que des films en forme de casque, peuvent être posées sur la couche de masque à motifs, ce qui permet d'obtenir des avantages en termes de sélectivité.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240606&DB=EPODOC&CC=WO&NR=2024118304A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240606&DB=EPODOC&CC=WO&NR=2024118304A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>REDDY, Kapu Sirish</creatorcontrib><creatorcontrib>BHADAURIYA, Sonal</creatorcontrib><creatorcontrib>PUTHENKOVILAKAM, Ragesh</creatorcontrib><title>METAL DOPED CARBON NON-CONFORMAL DEPOSITION</title><description>Methods and apparatuses for forming non-conformal metal-doped films on patterned semiconductor substrates to facilitate deeper etching of features are provided. Selective deposition and etch back of a tungsten-doped carbide film can be tuned to configure desired shapes. Shapes with rounded profiles such as helmet-shaped films may be laid over the patterned mask layer, providing selectivity benefits.
La présente invention concerne des procédés et des appareils pour former des films dopés au métal non conformes sur des substrats semi-conducteurs à motifs pour faciliter une gravure plus profonde de caractéristiques. Un dépôt sélectif et une gravure en retrait d'un film de carbure dopé au tungstène peuvent être réglés pour configurer des formes souhaitées. Des formes à profils arrondis, telles que des films en forme de casque, peuvent être posées sur la couche de masque à motifs, ce qui permet d'obtenir des avantages en termes de sélectivité.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2dQ1x9FFw8Q9wdVFwdgxy8vdT8PP303X293PzD_IFSbkG-Ad7hnj6-_EwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvhwfyMDIxNDQwtjAxNHQ2PiVAEA_Y4lvw</recordid><startdate>20240606</startdate><enddate>20240606</enddate><creator>REDDY, Kapu Sirish</creator><creator>BHADAURIYA, Sonal</creator><creator>PUTHENKOVILAKAM, Ragesh</creator><scope>EVB</scope></search><sort><creationdate>20240606</creationdate><title>METAL DOPED CARBON NON-CONFORMAL DEPOSITION</title><author>REDDY, Kapu Sirish ; BHADAURIYA, Sonal ; PUTHENKOVILAKAM, Ragesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2024118304A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>REDDY, Kapu Sirish</creatorcontrib><creatorcontrib>BHADAURIYA, Sonal</creatorcontrib><creatorcontrib>PUTHENKOVILAKAM, Ragesh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>REDDY, Kapu Sirish</au><au>BHADAURIYA, Sonal</au><au>PUTHENKOVILAKAM, Ragesh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METAL DOPED CARBON NON-CONFORMAL DEPOSITION</title><date>2024-06-06</date><risdate>2024</risdate><abstract>Methods and apparatuses for forming non-conformal metal-doped films on patterned semiconductor substrates to facilitate deeper etching of features are provided. Selective deposition and etch back of a tungsten-doped carbide film can be tuned to configure desired shapes. Shapes with rounded profiles such as helmet-shaped films may be laid over the patterned mask layer, providing selectivity benefits.
La présente invention concerne des procédés et des appareils pour former des films dopés au métal non conformes sur des substrats semi-conducteurs à motifs pour faciliter une gravure plus profonde de caractéristiques. Un dépôt sélectif et une gravure en retrait d'un film de carbure dopé au tungstène peuvent être réglés pour configurer des formes souhaitées. Des formes à profils arrondis, telles que des films en forme de casque, peuvent être posées sur la couche de masque à motifs, ce qui permet d'obtenir des avantages en termes de sélectivité.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METAL DOPED CARBON NON-CONFORMAL DEPOSITION |
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