STORAGE ARRAY, MEMORY, AND ELECTRONIC DEVICE

Embodiments of the present application provide a storage array, a memory, and an electronic device, relate to the technical field of semiconductor memories, and are used for increasing the storage density of a memory. The storage array comprises a substrate and a plurality of storage layers, the plurality of storage layers are stacked in a first direction perpendicular to the substrate, and each storage layer comprises a plurality of memory cells and a first control line structure, a second control line structure, and a third control line structure. Each memory cell comprises a floating body effect transistor, and each floating body effect transistor comprises a first gate, a first electrode, a second electrode, and a trench located between the first electrode and the second electrode. The trenches are arranged in a second direction parallel to the substrate, and the first gates and the trenches are separated by a gate oxide dielectric layer. The first electrodes are connected to the first control line struct