CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER

A semiconductor structure includes a stack of alternating doped semiconductor epitaxial layers and cap epitaxial layers formed on a substrate. Each doped semiconductor epitaxial layer includes silicon having carrier dopants, and each cap epitaxial layer includes silicon and carbon un-doped with carr...

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Bibliographische Detailangaben
Hauptverfasser:	JEWELL, Jason, DUBE, Abhishek
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A semiconductor structure includes a stack of alternating doped semiconductor epitaxial layers and cap epitaxial layers formed on a substrate. Each doped semiconductor epitaxial layer includes silicon having carrier dopants, and each cap epitaxial layer includes silicon and carbon un-doped with carrier dopants. Une structure semi-conductrice comprend un empilement de couches épitaxiales semi-conductrices dopées alternées et de couches épitaxiales d'encapsulation formées sur un substrat. Chaque couche épitaxiale de semi-conducteur dopée comprend du silicium ayant des dopants de support, et chaque couche épitaxiale d'encapsulation comprend du silicium et du carbone non dopé avec des dopants de support.