A LIGHT EMITTING DEVICE ON GE

A light emitting device (10) comprising a germanium first layer (12); a nucleation layer (14); a buffer layer 16 comprising a III-V composition; and an active layer (24). The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JOHNSON, Andrew, LIM, Sung Wook, MARCHAND, Hugues
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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