A LIGHT EMITTING DEVICE ON GE
A light emitting device (10) comprising a germanium first layer (12); a nucleation layer (14); a buffer layer 16 comprising a III-V composition; and an active layer (24). The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fa...
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| creator | JOHNSON, Andrew LIM, Sung Wook MARCHAND, Hugues |
| description | A light emitting device (10) comprising a germanium first layer (12); a nucleation layer (14); a buffer layer 16 comprising a III-V composition; and an active layer (24). The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.
Dispositif électroluminescent (10) comprenant une première couche de germanium (12) ; une couche de nucléation (14) ; une couche tampon (16) comprenant une composition III-V ; et une couche photoactive (24). Le produit de somme de la concentration en As et de l'épaisseur de couche dans chacune des couches est inférieur à 20 %. Ceci permet de fabriquer les dispositifs dans un environnement qui doit être exempt, ou sensiblement exempt, d'arsenic. |
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Dispositif électroluminescent (10) comprenant une première couche de germanium (12) ; une couche de nucléation (14) ; une couche tampon (16) comprenant une composition III-V ; et une couche photoactive (24). Le produit de somme de la concentration en As et de l'épaisseur de couche dans chacune des couches est inférieur à 20 %. Ceci permet de fabriquer les dispositifs dans un environnement qui doit être exempt, ou sensiblement exempt, d'arsenic.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240321&DB=EPODOC&CC=WO&NR=2024056423A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240321&DB=EPODOC&CC=WO&NR=2024056423A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOHNSON, Andrew</creatorcontrib><creatorcontrib>LIM, Sung Wook</creatorcontrib><creatorcontrib>MARCHAND, Hugues</creatorcontrib><title>A LIGHT EMITTING DEVICE ON GE</title><description>A light emitting device (10) comprising a germanium first layer (12); a nucleation layer (14); a buffer layer 16 comprising a III-V composition; and an active layer (24). The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.
Dispositif électroluminescent (10) comprenant une première couche de germanium (12) ; une couche de nucléation (14) ; une couche tampon (16) comprenant une composition III-V ; et une couche photoactive (24). Le produit de somme de la concentration en As et de l'épaisseur de couche dans chacune des couches est inférieur à 20 %. Ceci permet de fabriquer les dispositifs dans un environnement qui doit être exempt, ou sensiblement exempt, d'arsenic.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB1VPDxdPcIUXD19QwJ8fRzV3BxDfN0dlXw91Nwd-VhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGRiYGpmYmRsaOhsbEqQIA5JIhfw</recordid><startdate>20240321</startdate><enddate>20240321</enddate><creator>JOHNSON, Andrew</creator><creator>LIM, Sung Wook</creator><creator>MARCHAND, Hugues</creator><scope>EVB</scope></search><sort><creationdate>20240321</creationdate><title>A LIGHT EMITTING DEVICE ON GE</title><author>JOHNSON, Andrew ; LIM, Sung Wook ; MARCHAND, Hugues</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2024056423A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JOHNSON, Andrew</creatorcontrib><creatorcontrib>LIM, Sung Wook</creatorcontrib><creatorcontrib>MARCHAND, Hugues</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOHNSON, Andrew</au><au>LIM, Sung Wook</au><au>MARCHAND, Hugues</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A LIGHT EMITTING DEVICE ON GE</title><date>2024-03-21</date><risdate>2024</risdate><abstract>A light emitting device (10) comprising a germanium first layer (12); a nucleation layer (14); a buffer layer 16 comprising a III-V composition; and an active layer (24). The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.
Dispositif électroluminescent (10) comprenant une première couche de germanium (12) ; une couche de nucléation (14) ; une couche tampon (16) comprenant une composition III-V ; et une couche photoactive (24). Le produit de somme de la concentration en As et de l'épaisseur de couche dans chacune des couches est inférieur à 20 %. Ceci permet de fabriquer les dispositifs dans un environnement qui doit être exempt, ou sensiblement exempt, d'arsenic.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | A LIGHT EMITTING DEVICE ON GE |
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