FILM FORMING DEVICE, FILM FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
In an embodiment, this film forming method comprises a first film forming step for forming a first film formed from an organic material on a substrate by using a mask and a second film forming step for forming a second film formed from an inorganic material on the substrate by using the same mask th...
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| creator | HAMANO, Akihiro MATSUMOTO, Yukio SUGAWARA, Yuki |
| description | In an embodiment, this film forming method comprises a first film forming step for forming a first film formed from an organic material on a substrate by using a mask and a second film forming step for forming a second film formed from an inorganic material on the substrate by using the same mask that is used the first film forming step.
Dans un mode de réalisation, ce procédé de formation de film comprend une première étape de formation de film pour former un premier film formé à partir d'un matériau organique sur un substrat à l'aide d'un masque et une seconde étape de formation de film pour former un second film formé à partir d'un matériau inorganique sur le substrat à l'aide du même masque que celui qui est utilisé dans la première étape de formation de film.
実施形態成膜方法は、マスクを用いて基板に有機材料で構成された第１の膜を形成する第１成膜工程と、前記第１成膜工程と共通の前記マスクを用いて、前記基板に無機材料で構成された第２の膜を形成する第２成膜工程と、を有する。 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2024004501A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2024004501A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2024004501A13</originalsourceid><addsrcrecordid>eNrjZIhw8_TxVXDzD_L19HNXcHEN83R21VFAEfR1DfHwd9FRcPRzgbJBUgq-jn6hbo7OIaFBIEWuPq7OIUH-fp7OUEN4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8uL-RgZGJgYGJqYGho6ExcaoAa2wxlw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM FORMING DEVICE, FILM FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><source>esp@cenet</source><creator>HAMANO, Akihiro ; MATSUMOTO, Yukio ; SUGAWARA, Yuki</creator><creatorcontrib>HAMANO, Akihiro ; MATSUMOTO, Yukio ; SUGAWARA, Yuki</creatorcontrib><description>In an embodiment, this film forming method comprises a first film forming step for forming a first film formed from an organic material on a substrate by using a mask and a second film forming step for forming a second film formed from an inorganic material on the substrate by using the same mask that is used the first film forming step.
Dans un mode de réalisation, ce procédé de formation de film comprend une première étape de formation de film pour former un premier film formé à partir d'un matériau organique sur un substrat à l'aide d'un masque et une seconde étape de formation de film pour former un second film formé à partir d'un matériau inorganique sur le substrat à l'aide du même masque que celui qui est utilisé dans la première étape de formation de film.
実施形態成膜方法は、マスクを用いて基板に有機材料で構成された第１の膜を形成する第１成膜工程と、前記第１成膜工程と共通の前記マスクを用いて、前記基板に無機材料で構成された第２の膜を形成する第２成膜工程と、を有する。</description><language>eng ; fre ; jpn</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240104&DB=EPODOC&CC=WO&NR=2024004501A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240104&DB=EPODOC&CC=WO&NR=2024004501A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAMANO, Akihiro</creatorcontrib><creatorcontrib>MATSUMOTO, Yukio</creatorcontrib><creatorcontrib>SUGAWARA, Yuki</creatorcontrib><title>FILM FORMING DEVICE, FILM FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><description>In an embodiment, this film forming method comprises a first film forming step for forming a first film formed from an organic material on a substrate by using a mask and a second film forming step for forming a second film formed from an inorganic material on the substrate by using the same mask that is used the first film forming step.
Dans un mode de réalisation, ce procédé de formation de film comprend une première étape de formation de film pour former un premier film formé à partir d'un matériau organique sur un substrat à l'aide d'un masque et une seconde étape de formation de film pour former un second film formé à partir d'un matériau inorganique sur le substrat à l'aide du même masque que celui qui est utilisé dans la première étape de formation de film.
実施形態成膜方法は、マスクを用いて基板に有機材料で構成された第１の膜を形成する第１成膜工程と、前記第１成膜工程と共通の前記マスクを用いて、前記基板に無機材料で構成された第２の膜を形成する第２成膜工程と、を有する。</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIhw8_TxVXDzD_L19HNXcHEN83R21VFAEfR1DfHwd9FRcPRzgbJBUgq-jn6hbo7OIaFBIEWuPq7OIUH-fp7OUEN4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8uL-RgZGJgYGJqYGho6ExcaoAa2wxlw</recordid><startdate>20240104</startdate><enddate>20240104</enddate><creator>HAMANO, Akihiro</creator><creator>MATSUMOTO, Yukio</creator><creator>SUGAWARA, Yuki</creator><scope>EVB</scope></search><sort><creationdate>20240104</creationdate><title>FILM FORMING DEVICE, FILM FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><author>HAMANO, Akihiro ; MATSUMOTO, Yukio ; SUGAWARA, Yuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2024004501A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HAMANO, Akihiro</creatorcontrib><creatorcontrib>MATSUMOTO, Yukio</creatorcontrib><creatorcontrib>SUGAWARA, Yuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAMANO, Akihiro</au><au>MATSUMOTO, Yukio</au><au>SUGAWARA, Yuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM FORMING DEVICE, FILM FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><date>2024-01-04</date><risdate>2024</risdate><abstract>In an embodiment, this film forming method comprises a first film forming step for forming a first film formed from an organic material on a substrate by using a mask and a second film forming step for forming a second film formed from an inorganic material on the substrate by using the same mask that is used the first film forming step.
Dans un mode de réalisation, ce procédé de formation de film comprend une première étape de formation de film pour former un premier film formé à partir d'un matériau organique sur un substrat à l'aide d'un masque et une seconde étape de formation de film pour former un second film formé à partir d'un matériau inorganique sur le substrat à l'aide du même masque que celui qui est utilisé dans la première étape de formation de film.
実施形態成膜方法は、マスクを用いて基板に有機材料で構成された第１の膜を形成する第１成膜工程と、前記第１成膜工程と共通の前記マスクを用いて、前記基板に無機材料で構成された第２の膜を形成する第２成膜工程と、を有する。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM FORMING DEVICE, FILM FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE |
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