METAL SILICIDE CONTACT FORMATION

Provided are metal silicide contact forming processes including providing a substrate having a bottom crystalline silicon and dielectric sidewalls. This may be followed by metal layer deposition to form metal layer selectively on the bottom crystalline silicon using a metal halide precursor and a re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BONNER, Benjamin A, KARIM, Ishtak, PARK, Hee Sook, ASHTIANI, Kaihan Abidi, LEE, Sang-Hyeob
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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