CAPACITOR ELECTRODE FORMING METHOD
A capacitor electrode forming method according to an embodiment of the present invention comprises the steps of: spraying a source containing titanium (Ti) and spraying a reactant containing nitrogen to form a TiN thin film; and spraying a source containing silicon (Si) and spraying a reactant conta...
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JEON, Jeong Soo OH, Jin Pyo JUNG, Hyo Sub LEE, Jong Soo KIM, Yeon Rae SON, Cheong LEE, Da Eun LEE, Je Ryun |
| description | A capacitor electrode forming method according to an embodiment of the present invention comprises the steps of: spraying a source containing titanium (Ti) and spraying a reactant containing nitrogen to form a TiN thin film; and spraying a source containing silicon (Si) and spraying a reactant containing nitrogen to form a SiN thin film, wherein at least one of the source containing titanium (Ti) and the source containing silicon (Si) is sprayed multiple times. Therefore, according to embodiments of the present invention, when the TiN and SiN thin films are laminated to form at least one of upper and lower electrodes of a capacitor, the deposition rate of the SiN thin film can be increased and step coverage of the thin films can be improved.
Un procédé de formation d'électrode de condensateur selon un mode de réalisation de la présente invention comprend les étapes consistant : à pulvériser une source contenant du titane (Ti) et à pulvériser un réactif contenant de l'azote pour former un film mince d'étain ; et à pulvériser une source contenant du silicium (Si) et à pulvériser un réactif contenant de l'azote pour former un film mince de SiN, la source contenant du titane (Ti) et/ou la source contenant du silicium (Si) étant pulvérisée de multiples fois. Par conséquent, selon des modes de réalisation de la présente invention, lorsque les films minces d'étain et de SiN sont stratifiés pour former l'électrode supérieure et/ou l'électrode inférieure d'un condensateur, le taux de dépôt du film mince de SiN peut être augmenté et le recouvrement graduel des films minces peut être amélioré.
본 발명의 실시예에 따른 캐패시터 전극 형성 방법은, 티타늄(Ti)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 TiN 박막을 형성하는 단계 및 실리콘(Si)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 SiN 박막을 형성 단계를 포함하며, 티타늄(Ti)을 포함하는 소스 및 실리콘(Si)을 포함하는 소스 중 적어도 하나를 복수회 실시한다. 따라서, 본 발명의 실시예들에 의하면 TiN 박막과 SiN 박막을 적층하여 캐패시터의 하부 전극 및 상부 전극 중 적어도 하나를 형성하는데 있어서, SiN 박막의 증착 속도를 향상시킬 수 있으며, 박막의 스텝 커버리지(step coverage)를 향상시킬 수 있다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2023191395A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2023191395A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2023191395A13</originalsourceid><addsrcrecordid>eNrjZFBydgxwdPYM8Q9ScPVxdQ4J8ndxVXDzD_L19HNX8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgZGxoaWhsaWpo6GxsSpAgDAUiNf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CAPACITOR ELECTRODE FORMING METHOD</title><source>esp@cenet</source><creator>JEON, Jeong Soo ; OH, Jin Pyo ; JUNG, Hyo Sub ; LEE, Jong Soo ; KIM, Yeon Rae ; SON, Cheong ; LEE, Da Eun ; LEE, Je Ryun</creator><creatorcontrib>JEON, Jeong Soo ; OH, Jin Pyo ; JUNG, Hyo Sub ; LEE, Jong Soo ; KIM, Yeon Rae ; SON, Cheong ; LEE, Da Eun ; LEE, Je Ryun</creatorcontrib><description>A capacitor electrode forming method according to an embodiment of the present invention comprises the steps of: spraying a source containing titanium (Ti) and spraying a reactant containing nitrogen to form a TiN thin film; and spraying a source containing silicon (Si) and spraying a reactant containing nitrogen to form a SiN thin film, wherein at least one of the source containing titanium (Ti) and the source containing silicon (Si) is sprayed multiple times. Therefore, according to embodiments of the present invention, when the TiN and SiN thin films are laminated to form at least one of upper and lower electrodes of a capacitor, the deposition rate of the SiN thin film can be increased and step coverage of the thin films can be improved.
Un procédé de formation d'électrode de condensateur selon un mode de réalisation de la présente invention comprend les étapes consistant : à pulvériser une source contenant du titane (Ti) et à pulvériser un réactif contenant de l'azote pour former un film mince d'étain ; et à pulvériser une source contenant du silicium (Si) et à pulvériser un réactif contenant de l'azote pour former un film mince de SiN, la source contenant du titane (Ti) et/ou la source contenant du silicium (Si) étant pulvérisée de multiples fois. Par conséquent, selon des modes de réalisation de la présente invention, lorsque les films minces d'étain et de SiN sont stratifiés pour former l'électrode supérieure et/ou l'électrode inférieure d'un condensateur, le taux de dépôt du film mince de SiN peut être augmenté et le recouvrement graduel des films minces peut être amélioré.
본 발명의 실시예에 따른 캐패시터 전극 형성 방법은, 티타늄(Ti)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 TiN 박막을 형성하는 단계 및 실리콘(Si)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 SiN 박막을 형성 단계를 포함하며, 티타늄(Ti)을 포함하는 소스 및 실리콘(Si)을 포함하는 소스 중 적어도 하나를 복수회 실시한다. 따라서, 본 발명의 실시예들에 의하면 TiN 박막과 SiN 박막을 적층하여 캐패시터의 하부 전극 및 상부 전극 중 적어도 하나를 형성하는데 있어서, SiN 박막의 증착 속도를 향상시킬 수 있으며, 박막의 스텝 커버리지(step coverage)를 향상시킬 수 있다.</description><language>eng ; fre ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231005&DB=EPODOC&CC=WO&NR=2023191395A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231005&DB=EPODOC&CC=WO&NR=2023191395A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JEON, Jeong Soo</creatorcontrib><creatorcontrib>OH, Jin Pyo</creatorcontrib><creatorcontrib>JUNG, Hyo Sub</creatorcontrib><creatorcontrib>LEE, Jong Soo</creatorcontrib><creatorcontrib>KIM, Yeon Rae</creatorcontrib><creatorcontrib>SON, Cheong</creatorcontrib><creatorcontrib>LEE, Da Eun</creatorcontrib><creatorcontrib>LEE, Je Ryun</creatorcontrib><title>CAPACITOR ELECTRODE FORMING METHOD</title><description>A capacitor electrode forming method according to an embodiment of the present invention comprises the steps of: spraying a source containing titanium (Ti) and spraying a reactant containing nitrogen to form a TiN thin film; and spraying a source containing silicon (Si) and spraying a reactant containing nitrogen to form a SiN thin film, wherein at least one of the source containing titanium (Ti) and the source containing silicon (Si) is sprayed multiple times. Therefore, according to embodiments of the present invention, when the TiN and SiN thin films are laminated to form at least one of upper and lower electrodes of a capacitor, the deposition rate of the SiN thin film can be increased and step coverage of the thin films can be improved.
Un procédé de formation d'électrode de condensateur selon un mode de réalisation de la présente invention comprend les étapes consistant : à pulvériser une source contenant du titane (Ti) et à pulvériser un réactif contenant de l'azote pour former un film mince d'étain ; et à pulvériser une source contenant du silicium (Si) et à pulvériser un réactif contenant de l'azote pour former un film mince de SiN, la source contenant du titane (Ti) et/ou la source contenant du silicium (Si) étant pulvérisée de multiples fois. Par conséquent, selon des modes de réalisation de la présente invention, lorsque les films minces d'étain et de SiN sont stratifiés pour former l'électrode supérieure et/ou l'électrode inférieure d'un condensateur, le taux de dépôt du film mince de SiN peut être augmenté et le recouvrement graduel des films minces peut être amélioré.
본 발명의 실시예에 따른 캐패시터 전극 형성 방법은, 티타늄(Ti)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 TiN 박막을 형성하는 단계 및 실리콘(Si)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 SiN 박막을 형성 단계를 포함하며, 티타늄(Ti)을 포함하는 소스 및 실리콘(Si)을 포함하는 소스 중 적어도 하나를 복수회 실시한다. 따라서, 본 발명의 실시예들에 의하면 TiN 박막과 SiN 박막을 적층하여 캐패시터의 하부 전극 및 상부 전극 중 적어도 하나를 형성하는데 있어서, SiN 박막의 증착 속도를 향상시킬 수 있으며, 박막의 스텝 커버리지(step coverage)를 향상시킬 수 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBydgxwdPYM8Q9ScPVxdQ4J8ndxVXDzD_L19HNX8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgZGxoaWhsaWpo6GxsSpAgDAUiNf</recordid><startdate>20231005</startdate><enddate>20231005</enddate><creator>JEON, Jeong Soo</creator><creator>OH, Jin Pyo</creator><creator>JUNG, Hyo Sub</creator><creator>LEE, Jong Soo</creator><creator>KIM, Yeon Rae</creator><creator>SON, Cheong</creator><creator>LEE, Da Eun</creator><creator>LEE, Je Ryun</creator><scope>EVB</scope></search><sort><creationdate>20231005</creationdate><title>CAPACITOR ELECTRODE FORMING METHOD</title><author>JEON, Jeong Soo ; OH, Jin Pyo ; JUNG, Hyo Sub ; LEE, Jong Soo ; KIM, Yeon Rae ; SON, Cheong ; LEE, Da Eun ; LEE, Je Ryun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023191395A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; kor</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>JEON, Jeong Soo</creatorcontrib><creatorcontrib>OH, Jin Pyo</creatorcontrib><creatorcontrib>JUNG, Hyo Sub</creatorcontrib><creatorcontrib>LEE, Jong Soo</creatorcontrib><creatorcontrib>KIM, Yeon Rae</creatorcontrib><creatorcontrib>SON, Cheong</creatorcontrib><creatorcontrib>LEE, Da Eun</creatorcontrib><creatorcontrib>LEE, Je Ryun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JEON, Jeong Soo</au><au>OH, Jin Pyo</au><au>JUNG, Hyo Sub</au><au>LEE, Jong Soo</au><au>KIM, Yeon Rae</au><au>SON, Cheong</au><au>LEE, Da Eun</au><au>LEE, Je Ryun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CAPACITOR ELECTRODE FORMING METHOD</title><date>2023-10-05</date><risdate>2023</risdate><abstract>A capacitor electrode forming method according to an embodiment of the present invention comprises the steps of: spraying a source containing titanium (Ti) and spraying a reactant containing nitrogen to form a TiN thin film; and spraying a source containing silicon (Si) and spraying a reactant containing nitrogen to form a SiN thin film, wherein at least one of the source containing titanium (Ti) and the source containing silicon (Si) is sprayed multiple times. Therefore, according to embodiments of the present invention, when the TiN and SiN thin films are laminated to form at least one of upper and lower electrodes of a capacitor, the deposition rate of the SiN thin film can be increased and step coverage of the thin films can be improved.
Un procédé de formation d'électrode de condensateur selon un mode de réalisation de la présente invention comprend les étapes consistant : à pulvériser une source contenant du titane (Ti) et à pulvériser un réactif contenant de l'azote pour former un film mince d'étain ; et à pulvériser une source contenant du silicium (Si) et à pulvériser un réactif contenant de l'azote pour former un film mince de SiN, la source contenant du titane (Ti) et/ou la source contenant du silicium (Si) étant pulvérisée de multiples fois. Par conséquent, selon des modes de réalisation de la présente invention, lorsque les films minces d'étain et de SiN sont stratifiés pour former l'électrode supérieure et/ou l'électrode inférieure d'un condensateur, le taux de dépôt du film mince de SiN peut être augmenté et le recouvrement graduel des films minces peut être amélioré.
본 발명의 실시예에 따른 캐패시터 전극 형성 방법은, 티타늄(Ti)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 TiN 박막을 형성하는 단계 및 실리콘(Si)을 포함하는 소스를 분사하고, 질소가 포함된 리액턴트를 분사하여 SiN 박막을 형성 단계를 포함하며, 티타늄(Ti)을 포함하는 소스 및 실리콘(Si)을 포함하는 소스 중 적어도 하나를 복수회 실시한다. 따라서, 본 발명의 실시예들에 의하면 TiN 박막과 SiN 박막을 적층하여 캐패시터의 하부 전극 및 상부 전극 중 적어도 하나를 형성하는데 있어서, SiN 박막의 증착 속도를 향상시킬 수 있으며, 박막의 스텝 커버리지(step coverage)를 향상시킬 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; kor |
| recordid | cdi_epo_espacenet_WO2023191395A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CAPACITOR ELECTRODE FORMING METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T05%3A23%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JEON,%20Jeong%20Soo&rft.date=2023-10-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2023191395A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |