SEAM-FREE AND CRACK-FREE DEPOSITION

Methods and apparatuses for depositing material into features on a substrate by depositing a first portion of a material; etching a V-shaped hole at or near a feature opening; and depositing a second portion of the material to fill the feature are provided herein. L'invention concerne des procé...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	RAMASAGARAM, Praneeth, AGNEW, Douglas Walter, VAN SCHRAVENDIJK, Bart J, VARNELL, Jason Alexander, GUPTA, Awnish
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Methods and apparatuses for depositing material into features on a substrate by depositing a first portion of a material; etching a V-shaped hole at or near a feature opening; and depositing a second portion of the material to fill the feature are provided herein. L'invention concerne des procédés et des appareils pour déposer un matériau dans des caractéristiques sur un substrat par dépôt d'une première partie d'un matériau ; gravure d'un trou en forme de V au niveau ou à proximité d'une ouverture de caractéristique ; et dépôt d'une seconde partie du matériau pour remplir la caractéristique.