PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT
[Problem] Since a high-temperature process is required when adding impurities to a single crystal semiconductor film by means of ion implantation or by means of thermal diffusion, it has been difficult to form a steep impurity profile. [Solution] A production method for a single crystal semiconducto...
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| creator | NOZAKI Shota ESAKI Hiroya AOYAGI Yosuke IKENO Kento HIROSE Nobumitsu SUDA Yoshiyuki TAMANYU Satoshi AKATSUKA Goubun TSUKAMOTO Takahiro |
| description | [Problem] Since a high-temperature process is required when adding impurities to a single crystal semiconductor film by means of ion implantation or by means of thermal diffusion, it has been difficult to form a steep impurity profile. [Solution] A production method for a single crystal semiconductor film by means of crystal growth using a magnetron sputtering device to which one or a plurality of group 14 semiconductor targets are mounted, the method being characterized in that: at least one of the targets is doped with impurities; the film-forming temperature is 300°C or higher; the growth rate is 10 nm or less per minute; the sputtering gas is an inert gas; and sputtering of the one or plurality of targets is carried out simultaneously.
[Problème] Du fait qu'un processus à haute température est nécessaire lors de l'ajout d'impuretés à un film semi-conducteur monocristallin au moyen d'une implantation ionique ou au moyen d'une diffusion thermique, il a été difficile de former un profil d'impureté raide. La solution selon l'invention porte sur un procédé de production d'un film semi-conducteur monocristallin au moyen d'une croissance cristalline à l'aide d'un dispositif de pulvérisation magnétron sur lequel une ou plusieurs cibles semi-conductrices du groupe 14 sont montées, le procédé étant caractérisé en ce que : au moins l'une des cibles est dopée avec des impuretés ; la température de formation de film est égale ou supérieure à 300 °C ; le taux de croissance est de 10 nm ou moins par minute ; le gaz de pulvérisation est un gaz inerte ; et la pulvérisation de la cible ou de la pluralité de cibles est mise en œuvre simultanément.
【課題】半導体結晶膜中に不純物をイオン注入する場合や、熱拡散による場合には、高温工程を必要とするため急峻な不純物プロファイルを形成することが困難であった。 【解決手段】１もしくは複数の１４族半導体ターゲットを装着したマグネトロンスパッタ装置を用いた結晶成長による単結晶半導体膜の製造方法であって、少なくともターゲットの１つは不純物がドープされ、成膜温度は300℃以上であり、成長速度は毎分10 nm以下であり、スパッタガスは不活性ガスであり、１もしくは複数のターゲットを同時にスパッタすることを特徴とする。 |
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[Problème] Du fait qu'un processus à haute température est nécessaire lors de l'ajout d'impuretés à un film semi-conducteur monocristallin au moyen d'une implantation ionique ou au moyen d'une diffusion thermique, il a été difficile de former un profil d'impureté raide. La solution selon l'invention porte sur un procédé de production d'un film semi-conducteur monocristallin au moyen d'une croissance cristalline à l'aide d'un dispositif de pulvérisation magnétron sur lequel une ou plusieurs cibles semi-conductrices du groupe 14 sont montées, le procédé étant caractérisé en ce que : au moins l'une des cibles est dopée avec des impuretés ; la température de formation de film est égale ou supérieure à 300 °C ; le taux de croissance est de 10 nm ou moins par minute ; le gaz de pulvérisation est un gaz inerte ; et la pulvérisation de la cible ou de la pluralité de cibles est mise en œuvre simultanément.
【課題】半導体結晶膜中に不純物をイオン注入する場合や、熱拡散による場合には、高温工程を必要とするため急峻な不純物プロファイルを形成することが困難であった。 【解決手段】１もしくは複数の１４族半導体ターゲットを装着したマグネトロンスパッタ装置を用いた結晶成長による単結晶半導体膜の製造方法であって、少なくともターゲットの１つは不純物がドープされ、成膜温度は300℃以上であり、成長速度は毎分10 nm以下であり、スパッタガスは不活性ガスであり、１もしくは複数のターゲットを同時にスパッタすることを特徴とする。</description><language>eng ; fre ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230831&DB=EPODOC&CC=WO&NR=2023163078A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230831&DB=EPODOC&CC=WO&NR=2023163078A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NOZAKI Shota</creatorcontrib><creatorcontrib>ESAKI Hiroya</creatorcontrib><creatorcontrib>AOYAGI Yosuke</creatorcontrib><creatorcontrib>IKENO Kento</creatorcontrib><creatorcontrib>HIROSE Nobumitsu</creatorcontrib><creatorcontrib>SUDA Yoshiyuki</creatorcontrib><creatorcontrib>TAMANYU Satoshi</creatorcontrib><creatorcontrib>AKATSUKA Goubun</creatorcontrib><creatorcontrib>TSUKAMOTO Takahiro</creatorcontrib><title>PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT</title><description>[Problem] Since a high-temperature process is required when adding impurities to a single crystal semiconductor film by means of ion implantation or by means of thermal diffusion, it has been difficult to form a steep impurity profile. [Solution] A production method for a single crystal semiconductor film by means of crystal growth using a magnetron sputtering device to which one or a plurality of group 14 semiconductor targets are mounted, the method being characterized in that: at least one of the targets is doped with impurities; the film-forming temperature is 300°C or higher; the growth rate is 10 nm or less per minute; the sputtering gas is an inert gas; and sputtering of the one or plurality of targets is carried out simultaneously.
[Problème] Du fait qu'un processus à haute température est nécessaire lors de l'ajout d'impuretés à un film semi-conducteur monocristallin au moyen d'une implantation ionique ou au moyen d'une diffusion thermique, il a été difficile de former un profil d'impureté raide. La solution selon l'invention porte sur un procédé de production d'un film semi-conducteur monocristallin au moyen d'une croissance cristalline à l'aide d'un dispositif de pulvérisation magnétron sur lequel une ou plusieurs cibles semi-conductrices du groupe 14 sont montées, le procédé étant caractérisé en ce que : au moins l'une des cibles est dopée avec des impuretés ; la température de formation de film est égale ou supérieure à 300 °C ; le taux de croissance est de 10 nm ou moins par minute ; le gaz de pulvérisation est un gaz inerte ; et la pulvérisation de la cible ou de la pluralité de cibles est mise en œuvre simultanément.
【課題】半導体結晶膜中に不純物をイオン注入する場合や、熱拡散による場合には、高温工程を必要とするため急峻な不純物プロファイルを形成することが困難であった。 【解決手段】１もしくは複数の１４族半導体ターゲットを装着したマグネトロンスパッタ装置を用いた結晶成長による単結晶半導体膜の製造方法であって、少なくともターゲットの１つは不純物がドープされ、成膜温度は300℃以上であり、成長速度は毎分10 nm以下であり、スパッタガスは不活性ガスであり、１もしくは複数のターゲットを同時にスパッタすることを特徴とする。</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJgXEOTvEuoc4unvp-DrGuLh76Lg5h-kEOzp5-7jquAcFBkc4uijEOzq6-ns7wdSCJR08_Tx1VHArtE31CfE08cx0hWiTMHfjRizHP1c0MRdfVx9Xf1CeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGRsaGZsYG5haOhMXGqAHD8ReI</recordid><startdate>20230831</startdate><enddate>20230831</enddate><creator>NOZAKI Shota</creator><creator>ESAKI Hiroya</creator><creator>AOYAGI Yosuke</creator><creator>IKENO Kento</creator><creator>HIROSE Nobumitsu</creator><creator>SUDA Yoshiyuki</creator><creator>TAMANYU Satoshi</creator><creator>AKATSUKA Goubun</creator><creator>TSUKAMOTO Takahiro</creator><scope>EVB</scope></search><sort><creationdate>20230831</creationdate><title>PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT</title><author>NOZAKI Shota ; ESAKI Hiroya ; AOYAGI Yosuke ; IKENO Kento ; HIROSE Nobumitsu ; SUDA Yoshiyuki ; TAMANYU Satoshi ; AKATSUKA Goubun ; TSUKAMOTO Takahiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023163078A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>NOZAKI Shota</creatorcontrib><creatorcontrib>ESAKI Hiroya</creatorcontrib><creatorcontrib>AOYAGI Yosuke</creatorcontrib><creatorcontrib>IKENO Kento</creatorcontrib><creatorcontrib>HIROSE Nobumitsu</creatorcontrib><creatorcontrib>SUDA Yoshiyuki</creatorcontrib><creatorcontrib>TAMANYU Satoshi</creatorcontrib><creatorcontrib>AKATSUKA Goubun</creatorcontrib><creatorcontrib>TSUKAMOTO Takahiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NOZAKI Shota</au><au>ESAKI Hiroya</au><au>AOYAGI Yosuke</au><au>IKENO Kento</au><au>HIROSE Nobumitsu</au><au>SUDA Yoshiyuki</au><au>TAMANYU Satoshi</au><au>AKATSUKA Goubun</au><au>TSUKAMOTO Takahiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT</title><date>2023-08-31</date><risdate>2023</risdate><abstract>[Problem] Since a high-temperature process is required when adding impurities to a single crystal semiconductor film by means of ion implantation or by means of thermal diffusion, it has been difficult to form a steep impurity profile. [Solution] A production method for a single crystal semiconductor film by means of crystal growth using a magnetron sputtering device to which one or a plurality of group 14 semiconductor targets are mounted, the method being characterized in that: at least one of the targets is doped with impurities; the film-forming temperature is 300°C or higher; the growth rate is 10 nm or less per minute; the sputtering gas is an inert gas; and sputtering of the one or plurality of targets is carried out simultaneously.
[Problème] Du fait qu'un processus à haute température est nécessaire lors de l'ajout d'impuretés à un film semi-conducteur monocristallin au moyen d'une implantation ionique ou au moyen d'une diffusion thermique, il a été difficile de former un profil d'impureté raide. La solution selon l'invention porte sur un procédé de production d'un film semi-conducteur monocristallin au moyen d'une croissance cristalline à l'aide d'un dispositif de pulvérisation magnétron sur lequel une ou plusieurs cibles semi-conductrices du groupe 14 sont montées, le procédé étant caractérisé en ce que : au moins l'une des cibles est dopée avec des impuretés ; la température de formation de film est égale ou supérieure à 300 °C ; le taux de croissance est de 10 nm ou moins par minute ; le gaz de pulvérisation est un gaz inerte ; et la pulvérisation de la cible ou de la pluralité de cibles est mise en œuvre simultanément.
【課題】半導体結晶膜中に不純物をイオン注入する場合や、熱拡散による場合には、高温工程を必要とするため急峻な不純物プロファイルを形成することが困難であった。 【解決手段】１もしくは複数の１４族半導体ターゲットを装着したマグネトロンスパッタ装置を用いた結晶成長による単結晶半導体膜の製造方法であって、少なくともターゲットの１つは不純物がドープされ、成膜温度は300℃以上であり、成長速度は毎分10 nm以下であり、スパッタガスは不活性ガスであり、１もしくは複数のターゲットを同時にスパッタすることを特徴とする。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT |
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