GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION
The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening...
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| creator | CHOO, Enle CONG, Zhepeng BAGHBANZADEH, Mostafa SHENG, Tao |
| description | The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.
La présente divulgation concerne de manière générale des chambres de traitement pour le traitement de semi-conducteurs. Dans un mode de réalisation, l'invention concerne un moniteur de croissance pour le traitement de substrats. Le moniteur de croissance comprend un support de capteur et un cristal disposé dans le support de capteur ayant un côté avant et un côté arrière. Une ouverture est formée dans le support de capteur exposant un côté avant du cristal. Une entrée de gaz est disposée à travers le support de capteur vers un plénum formé par le côté arrière du cristal et le support de capteur. Une sortie de gaz est en communication fluidique avec le plénum. |
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La présente divulgation concerne de manière générale des chambres de traitement pour le traitement de semi-conducteurs. Dans un mode de réalisation, l'invention concerne un moniteur de croissance pour le traitement de substrats. Le moniteur de croissance comprend un support de capteur et un cristal disposé dans le support de capteur ayant un côté avant et un côté arrière. Une ouverture est formée dans le support de capteur exposant un côté avant du cristal. Une entrée de gaz est disposée à travers le support de capteur vers un plénum formé par le côté arrière du cristal et le support de capteur. Une sortie de gaz est en communication fluidique avec le plénum.</description><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230608&DB=EPODOC&CC=WO&NR=2023101726A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230608&DB=EPODOC&CC=WO&NR=2023101726A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOO, Enle</creatorcontrib><creatorcontrib>CONG, Zhepeng</creatorcontrib><creatorcontrib>BAGHBANZADEH, Mostafa</creatorcontrib><creatorcontrib>SHENG, Tao</creatorcontrib><title>GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION</title><description>The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.
La présente divulgation concerne de manière générale des chambres de traitement pour le traitement de semi-conducteurs. Dans un mode de réalisation, l'invention concerne un moniteur de croissance pour le traitement de substrats. Le moniteur de croissance comprend un support de capteur et un cristal disposé dans le support de capteur ayant un côté avant et un côté arrière. Une ouverture est formée dans le support de capteur exposant un côté avant du cristal. Une entrée de gaz est disposée à travers le support de capteur vers un plénum formé par le côté arrière du cristal et le support de capteur. Une sortie de gaz est en communication fluidique avec le plénum.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1D_IPD_FQ8PX38wzxD1IIjgwOcfVVcPRzUfB1DfHwdwlWcAMKu3n6-Cq4uAb4B3uGePr78TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-HB_IwMjY0MDQ3MjM0dDY-JUAQCmCCi4</recordid><startdate>20230608</startdate><enddate>20230608</enddate><creator>CHOO, Enle</creator><creator>CONG, Zhepeng</creator><creator>BAGHBANZADEH, Mostafa</creator><creator>SHENG, Tao</creator><scope>EVB</scope></search><sort><creationdate>20230608</creationdate><title>GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION</title><author>CHOO, Enle ; CONG, Zhepeng ; BAGHBANZADEH, Mostafa ; SHENG, Tao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023101726A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOO, Enle</creatorcontrib><creatorcontrib>CONG, Zhepeng</creatorcontrib><creatorcontrib>BAGHBANZADEH, Mostafa</creatorcontrib><creatorcontrib>SHENG, Tao</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOO, Enle</au><au>CONG, Zhepeng</au><au>BAGHBANZADEH, Mostafa</au><au>SHENG, Tao</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION</title><date>2023-06-08</date><risdate>2023</risdate><abstract>The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.
La présente divulgation concerne de manière générale des chambres de traitement pour le traitement de semi-conducteurs. Dans un mode de réalisation, l'invention concerne un moniteur de croissance pour le traitement de substrats. Le moniteur de croissance comprend un support de capteur et un cristal disposé dans le support de capteur ayant un côté avant et un côté arrière. Une ouverture est formée dans le support de capteur exposant un côté avant du cristal. Une entrée de gaz est disposée à travers le support de capteur vers un plénum formé par le côté arrière du cristal et le support de capteur. Une sortie de gaz est en communication fluidique avec le plénum.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION |
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