AMORPHOUS TRANSPARENT CONDUCTIVE OXIDE FILMS AND METHODS OF FABRICATING THE SAME

A composite includes a substrate and a target material, wherein the target material includes indium oxide (In2O3), tin oxide (SnO2), and gallium oxide (Ga2O3), and a method for making the same. The method includes positioning the substrate and a target in a chamber and applying radio frequency (RF)...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DAINESE, JR, MANLEY, Robert George, ZHU, Bin, JIANG, Wei
Format: Patent
Sprache:eng ; fre
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator DAINESE, JR
MANLEY, Robert George
ZHU, Bin
JIANG, Wei
description A composite includes a substrate and a target material, wherein the target material includes indium oxide (In2O3), tin oxide (SnO2), and gallium oxide (Ga2O3), and a method for making the same. The method includes positioning the substrate and a target in a chamber and applying radio frequency (RF) power to the chamber to sputter ions of target material from the target onto the substrate. Un composite comprend un substrat et un matériau cible, le matériau cible comprenant de l'oxyde d'indium (In2O3), de l'oxyde d'étain (SnO2) et de l'oxyde de gallium (Ga2O3), ainsi qu'un procédé de fabrication s'y rapportant. Le procédé comprend le positionnement du substrat et d'une cible dans une chambre et l'application d'une puissance radioélectrique (RF) à la chambre pour pulvériser des ions de matériau cible de la cible sur le substrat.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2023091330A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2023091330A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2023091330A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAuDqL-w4Gz0DaT45lcTMDkSnKtbqVInEQL9f9x8QOc3vLWVYeBU-e4zyAJY-4wURTQHE2vxQ8EfPOGwPpLyIDRQCBxbDKwBYun5DWKj2cQR5Ax0LZaPabnUnY_N9Xekmh3KPN7LMs83curfMYrt3Wr6mOjVI2N-m99AUO1L-o</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>AMORPHOUS TRANSPARENT CONDUCTIVE OXIDE FILMS AND METHODS OF FABRICATING THE SAME</title><source>esp@cenet</source><creator>DAINESE, JR ; MANLEY, Robert George ; ZHU, Bin ; JIANG, Wei</creator><creatorcontrib>DAINESE, JR ; MANLEY, Robert George ; ZHU, Bin ; JIANG, Wei</creatorcontrib><description>A composite includes a substrate and a target material, wherein the target material includes indium oxide (In2O3), tin oxide (SnO2), and gallium oxide (Ga2O3), and a method for making the same. The method includes positioning the substrate and a target in a chamber and applying radio frequency (RF) power to the chamber to sputter ions of target material from the target onto the substrate. Un composite comprend un substrat et un matériau cible, le matériau cible comprenant de l'oxyde d'indium (In2O3), de l'oxyde d'étain (SnO2) et de l'oxyde de gallium (Ga2O3), ainsi qu'un procédé de fabrication s'y rapportant. Le procédé comprend le positionnement du substrat et d'une cible dans une chambre et l'application d'une puissance radioélectrique (RF) à la chambre pour pulvériser des ions de matériau cible de la cible sur le substrat.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INSULATORS ; METALLURGY ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230525&amp;DB=EPODOC&amp;CC=WO&amp;NR=2023091330A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230525&amp;DB=EPODOC&amp;CC=WO&amp;NR=2023091330A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAINESE, JR</creatorcontrib><creatorcontrib>MANLEY, Robert George</creatorcontrib><creatorcontrib>ZHU, Bin</creatorcontrib><creatorcontrib>JIANG, Wei</creatorcontrib><title>AMORPHOUS TRANSPARENT CONDUCTIVE OXIDE FILMS AND METHODS OF FABRICATING THE SAME</title><description>A composite includes a substrate and a target material, wherein the target material includes indium oxide (In2O3), tin oxide (SnO2), and gallium oxide (Ga2O3), and a method for making the same. The method includes positioning the substrate and a target in a chamber and applying radio frequency (RF) power to the chamber to sputter ions of target material from the target onto the substrate. Un composite comprend un substrat et un matériau cible, le matériau cible comprenant de l'oxyde d'indium (In2O3), de l'oxyde d'étain (SnO2) et de l'oxyde de gallium (Ga2O3), ainsi qu'un procédé de fabrication s'y rapportant. Le procédé comprend le positionnement du substrat et d'une cible dans une chambre et l'application d'une puissance radioélectrique (RF) à la chambre pour pulvériser des ions de matériau cible de la cible sur le substrat.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAuDqL-w4Gz0DaT45lcTMDkSnKtbqVInEQL9f9x8QOc3vLWVYeBU-e4zyAJY-4wURTQHE2vxQ8EfPOGwPpLyIDRQCBxbDKwBYun5DWKj2cQR5Ax0LZaPabnUnY_N9Xekmh3KPN7LMs83curfMYrt3Wr6mOjVI2N-m99AUO1L-o</recordid><startdate>20230525</startdate><enddate>20230525</enddate><creator>DAINESE, JR</creator><creator>MANLEY, Robert George</creator><creator>ZHU, Bin</creator><creator>JIANG, Wei</creator><scope>EVB</scope></search><sort><creationdate>20230525</creationdate><title>AMORPHOUS TRANSPARENT CONDUCTIVE OXIDE FILMS AND METHODS OF FABRICATING THE SAME</title><author>DAINESE, JR ; MANLEY, Robert George ; ZHU, Bin ; JIANG, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023091330A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DAINESE, JR</creatorcontrib><creatorcontrib>MANLEY, Robert George</creatorcontrib><creatorcontrib>ZHU, Bin</creatorcontrib><creatorcontrib>JIANG, Wei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAINESE, JR</au><au>MANLEY, Robert George</au><au>ZHU, Bin</au><au>JIANG, Wei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>AMORPHOUS TRANSPARENT CONDUCTIVE OXIDE FILMS AND METHODS OF FABRICATING THE SAME</title><date>2023-05-25</date><risdate>2023</risdate><abstract>A composite includes a substrate and a target material, wherein the target material includes indium oxide (In2O3), tin oxide (SnO2), and gallium oxide (Ga2O3), and a method for making the same. The method includes positioning the substrate and a target in a chamber and applying radio frequency (RF) power to the chamber to sputter ions of target material from the target onto the substrate. Un composite comprend un substrat et un matériau cible, le matériau cible comprenant de l'oxyde d'indium (In2O3), de l'oxyde d'étain (SnO2) et de l'oxyde de gallium (Ga2O3), ainsi qu'un procédé de fabrication s'y rapportant. Le procédé comprend le positionnement du substrat et d'une cible dans une chambre et l'application d'une puissance radioélectrique (RF) à la chambre pour pulvériser des ions de matériau cible de la cible sur le substrat.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre
recordid cdi_epo_espacenet_WO2023091330A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CABLES
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CONDUCTORS
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INSULATORS
METALLURGY
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title AMORPHOUS TRANSPARENT CONDUCTIVE OXIDE FILMS AND METHODS OF FABRICATING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T23%3A19%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DAINESE,%20JR&rft.date=2023-05-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2023091330A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true