HARD NITRIDE-CONTAINING SPUTTERING TARGET
Provided are: a hard nitride-containing sputtering target that can prevent the occurrence of arcing during sputtering, caused by inclusion of relatively course zirconia particles, and can suppress the generation of particles during film formation; and a production method therefor. The hard nitride-c...
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| creator | NISHIURA, Masahiro WATANABE, Yasunobu YAMAMOTO, Takamichi |
| description | Provided are: a hard nitride-containing sputtering target that can prevent the occurrence of arcing during sputtering, caused by inclusion of relatively course zirconia particles, and can suppress the generation of particles during film formation; and a production method therefor. The hard nitride-containing sputtering target: comprises an alloy phase including Fe or Co and a non-magnetic phase including a hard nitride selected from AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN, or any combination of these; and is characterized by having a Zr impurities concentration, when measured as metallic Zr, that is restricted to no more than 1,000 ppm and a Vickers hardness Hv of 200-600 when measured under a 3 kgf load.
L'invention concerne : une cible de pulvérisation contenant du nitrure dur qui permet d'empêcher l'apparition d'un arc pendant la pulvérisation cathodique, provoquée par une inclusion de particules de zircone relativement alignées, et qui permet de supprimer la génération de particules pendant une formation de film ; et un procédé de production associé. La cible de pulvérisation cathodique contenant du nitrure dur : comprend une phase d'alliage comprenant du Fe ou du Co et une phase non magnétique comprenant un nitrure dur choisi parmi AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN ou une quelconque combinaison de ces derniers ; et est caractérisée en ce qu'elle présente une concentration en impuretés de Zr, lorsque mesurée en tant que Zr métallique, qui est limitée à 1 000 ppm au plus et une dureté Vickers Hv s'inscrivant dans une plage de 200 à 600 lorsque mesurée sous une charge de 3 kgf.
比較的粗大なジルコニア粒子の混入によるスパッタリング中のアーキングの発生を防止し、成膜時のパーティクル発生を抑制することができる硬質窒化物含有スパッタリングターゲット及びその製造方法を提供する。 ＦｅまたはＣｏを含む合金相と、ＡｌＮ、ＢＮ、Ｃｒ２Ｎ、Ｓｉ３Ｎ４、ＨｆＮ、ＮｂＮ、ＴａＮ、ＴｉＮ、ＶＮおよびこれらの任意の組み合わせから選択される硬質窒化物を含む非磁性相と、からなり、金属Ｚｒとして測定した場合のＺｒ不純物濃度が１０００ｐｐｍ以下に規制され、３ｋｇｆの荷重条件で測定したビッカース硬度Ｈｖが２００以上６００以下であることを特徴とする、硬質窒化物含有スパッタリングターゲット。 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2023037810A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2023037810A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2023037810A13</originalsourceid><addsrcrecordid>eNrjZND0cAxyUfDzDAnydHHVdfb3C3H09PP0c1cIDggNCXENAjFDHIPcXUN4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8uL-RgZGxgbG5haGBo6ExcaoA0o0ldQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HARD NITRIDE-CONTAINING SPUTTERING TARGET</title><source>esp@cenet</source><creator>NISHIURA, Masahiro ; WATANABE, Yasunobu ; YAMAMOTO, Takamichi</creator><creatorcontrib>NISHIURA, Masahiro ; WATANABE, Yasunobu ; YAMAMOTO, Takamichi</creatorcontrib><description>Provided are: a hard nitride-containing sputtering target that can prevent the occurrence of arcing during sputtering, caused by inclusion of relatively course zirconia particles, and can suppress the generation of particles during film formation; and a production method therefor. The hard nitride-containing sputtering target: comprises an alloy phase including Fe or Co and a non-magnetic phase including a hard nitride selected from AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN, or any combination of these; and is characterized by having a Zr impurities concentration, when measured as metallic Zr, that is restricted to no more than 1,000 ppm and a Vickers hardness Hv of 200-600 when measured under a 3 kgf load.
L'invention concerne : une cible de pulvérisation contenant du nitrure dur qui permet d'empêcher l'apparition d'un arc pendant la pulvérisation cathodique, provoquée par une inclusion de particules de zircone relativement alignées, et qui permet de supprimer la génération de particules pendant une formation de film ; et un procédé de production associé. La cible de pulvérisation cathodique contenant du nitrure dur : comprend une phase d'alliage comprenant du Fe ou du Co et une phase non magnétique comprenant un nitrure dur choisi parmi AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN ou une quelconque combinaison de ces derniers ; et est caractérisée en ce qu'elle présente une concentration en impuretés de Zr, lorsque mesurée en tant que Zr métallique, qui est limitée à 1 000 ppm au plus et une dureté Vickers Hv s'inscrivant dans une plage de 200 à 600 lorsque mesurée sous une charge de 3 kgf.
比較的粗大なジルコニア粒子の混入によるスパッタリング中のアーキングの発生を防止し、成膜時のパーティクル発生を抑制することができる硬質窒化物含有スパッタリングターゲット及びその製造方法を提供する。 ＦｅまたはＣｏを含む合金相と、ＡｌＮ、ＢＮ、Ｃｒ２Ｎ、Ｓｉ３Ｎ４、ＨｆＮ、ＮｂＮ、ＴａＮ、ＴｉＮ、ＶＮおよびこれらの任意の組み合わせから選択される硬質窒化物を含む非磁性相と、からなり、金属Ｚｒとして測定した場合のＺｒ不純物濃度が１０００ｐｐｍ以下に規制され、３ｋｇｆの荷重条件で測定したビッカース硬度Ｈｖが２００以上６００以下であることを特徴とする、硬質窒化物含有スパッタリングターゲット。</description><language>eng ; fre ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MAGNETS ; METALLURGY ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSFORMERS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230316&DB=EPODOC&CC=WO&NR=2023037810A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230316&DB=EPODOC&CC=WO&NR=2023037810A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIURA, Masahiro</creatorcontrib><creatorcontrib>WATANABE, Yasunobu</creatorcontrib><creatorcontrib>YAMAMOTO, Takamichi</creatorcontrib><title>HARD NITRIDE-CONTAINING SPUTTERING TARGET</title><description>Provided are: a hard nitride-containing sputtering target that can prevent the occurrence of arcing during sputtering, caused by inclusion of relatively course zirconia particles, and can suppress the generation of particles during film formation; and a production method therefor. The hard nitride-containing sputtering target: comprises an alloy phase including Fe or Co and a non-magnetic phase including a hard nitride selected from AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN, or any combination of these; and is characterized by having a Zr impurities concentration, when measured as metallic Zr, that is restricted to no more than 1,000 ppm and a Vickers hardness Hv of 200-600 when measured under a 3 kgf load.
L'invention concerne : une cible de pulvérisation contenant du nitrure dur qui permet d'empêcher l'apparition d'un arc pendant la pulvérisation cathodique, provoquée par une inclusion de particules de zircone relativement alignées, et qui permet de supprimer la génération de particules pendant une formation de film ; et un procédé de production associé. La cible de pulvérisation cathodique contenant du nitrure dur : comprend une phase d'alliage comprenant du Fe ou du Co et une phase non magnétique comprenant un nitrure dur choisi parmi AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN ou une quelconque combinaison de ces derniers ; et est caractérisée en ce qu'elle présente une concentration en impuretés de Zr, lorsque mesurée en tant que Zr métallique, qui est limitée à 1 000 ppm au plus et une dureté Vickers Hv s'inscrivant dans une plage de 200 à 600 lorsque mesurée sous une charge de 3 kgf.
比較的粗大なジルコニア粒子の混入によるスパッタリング中のアーキングの発生を防止し、成膜時のパーティクル発生を抑制することができる硬質窒化物含有スパッタリングターゲット及びその製造方法を提供する。 ＦｅまたはＣｏを含む合金相と、ＡｌＮ、ＢＮ、Ｃｒ２Ｎ、Ｓｉ３Ｎ４、ＨｆＮ、ＮｂＮ、ＴａＮ、ＴｉＮ、ＶＮおよびこれらの任意の組み合わせから選択される硬質窒化物を含む非磁性相と、からなり、金属Ｚｒとして測定した場合のＺｒ不純物濃度が１０００ｐｐｍ以下に規制され、３ｋｇｆの荷重条件で測定したビッカース硬度Ｈｖが２００以上６００以下であることを特徴とする、硬質窒化物含有スパッタリングターゲット。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAGNETS</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND0cAxyUfDzDAnydHHVdfb3C3H09PP0c1cIDggNCXENAjFDHIPcXUN4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8uL-RgZGxgbG5haGBo6ExcaoA0o0ldQ</recordid><startdate>20230316</startdate><enddate>20230316</enddate><creator>NISHIURA, Masahiro</creator><creator>WATANABE, Yasunobu</creator><creator>YAMAMOTO, Takamichi</creator><scope>EVB</scope></search><sort><creationdate>20230316</creationdate><title>HARD NITRIDE-CONTAINING SPUTTERING TARGET</title><author>NISHIURA, Masahiro ; WATANABE, Yasunobu ; YAMAMOTO, Takamichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023037810A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAGNETS</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIURA, Masahiro</creatorcontrib><creatorcontrib>WATANABE, Yasunobu</creatorcontrib><creatorcontrib>YAMAMOTO, Takamichi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIURA, Masahiro</au><au>WATANABE, Yasunobu</au><au>YAMAMOTO, Takamichi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HARD NITRIDE-CONTAINING SPUTTERING TARGET</title><date>2023-03-16</date><risdate>2023</risdate><abstract>Provided are: a hard nitride-containing sputtering target that can prevent the occurrence of arcing during sputtering, caused by inclusion of relatively course zirconia particles, and can suppress the generation of particles during film formation; and a production method therefor. The hard nitride-containing sputtering target: comprises an alloy phase including Fe or Co and a non-magnetic phase including a hard nitride selected from AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN, or any combination of these; and is characterized by having a Zr impurities concentration, when measured as metallic Zr, that is restricted to no more than 1,000 ppm and a Vickers hardness Hv of 200-600 when measured under a 3 kgf load.
L'invention concerne : une cible de pulvérisation contenant du nitrure dur qui permet d'empêcher l'apparition d'un arc pendant la pulvérisation cathodique, provoquée par une inclusion de particules de zircone relativement alignées, et qui permet de supprimer la génération de particules pendant une formation de film ; et un procédé de production associé. La cible de pulvérisation cathodique contenant du nitrure dur : comprend une phase d'alliage comprenant du Fe ou du Co et une phase non magnétique comprenant un nitrure dur choisi parmi AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN ou une quelconque combinaison de ces derniers ; et est caractérisée en ce qu'elle présente une concentration en impuretés de Zr, lorsque mesurée en tant que Zr métallique, qui est limitée à 1 000 ppm au plus et une dureté Vickers Hv s'inscrivant dans une plage de 200 à 600 lorsque mesurée sous une charge de 3 kgf.
比較的粗大なジルコニア粒子の混入によるスパッタリング中のアーキングの発生を防止し、成膜時のパーティクル発生を抑制することができる硬質窒化物含有スパッタリングターゲット及びその製造方法を提供する。 ＦｅまたはＣｏを含む合金相と、ＡｌＮ、ＢＮ、Ｃｒ２Ｎ、Ｓｉ３Ｎ４、ＨｆＮ、ＮｂＮ、ＴａＮ、ＴｉＮ、ＶＮおよびこれらの任意の組み合わせから選択される硬質窒化物を含む非磁性相と、からなり、金属Ｚｒとして測定した場合のＺｒ不純物濃度が１０００ｐｐｍ以下に規制され、３ｋｇｆの荷重条件で測定したビッカース硬度Ｈｖが２００以上６００以下であることを特徴とする、硬質窒化物含有スパッタリングターゲット。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS |
| title | HARD NITRIDE-CONTAINING SPUTTERING TARGET |
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