QUARTZ SUSCEPTOR FOR ACCURATE NON-CONTACT TEMPERATURE MEASUREMENT
The present disclosure generally relates to a substrate support for processing of semiconductor substrates. In one example, the substrate support has a body. The body has a top surface configured to support a substrate thereon. The body has a bottom surface opposite the top surface. The body has an...
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| creator | VELLORE, Kim Ramkumar |
| description | The present disclosure generally relates to a substrate support for processing of semiconductor substrates. In one example, the substrate support has a body. The body has a top surface configured to support a substrate thereon. The body has a bottom surface opposite the top surface. The body has an upper portion disposed at the top surface and a lower portion disposed at the bottom surface. An IR blocking material is encased by the upper portion and the lower portion, wherein the IR blocking material is an optically opaque at IR wavelengths and the lower portion is optically transparent at IR wavelengths.
La présente divulgation se rapporte de manière générale à un support de substrat destiné au traitement de substrats semi-conducteurs. Dans un exemple, le support de substrat comporte un corps. Le corps comporte une surface supérieure conçue pour porter un substrat sur cette dernière. Le corps comporte une surface inférieure opposée à la surface supérieure. Le corps comporte une partie supérieure disposée au niveau de la surface supérieure et une partie inférieure disposée au niveau de la surface inférieure. Un matériau de blocage d'IR est enfermé par la partie supérieure et la partie inférieure, le matériau de blocage d'IR étant optiquement opaque aux longueurs d'onde IR et la partie inférieure étant optiquement transparente aux longueurs d'onde IR. |
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La présente divulgation se rapporte de manière générale à un support de substrat destiné au traitement de substrats semi-conducteurs. Dans un exemple, le support de substrat comporte un corps. Le corps comporte une surface supérieure conçue pour porter un substrat sur cette dernière. Le corps comporte une surface inférieure opposée à la surface supérieure. Le corps comporte une partie supérieure disposée au niveau de la surface supérieure et une partie inférieure disposée au niveau de la surface inférieure. Un matériau de blocage d'IR est enfermé par la partie supérieure et la partie inférieure, le matériau de blocage d'IR étant optiquement opaque aux longueurs d'onde IR et la partie inférieure étant optiquement transparente aux longueurs d'onde IR.</description><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=WO&NR=2023033936A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=WO&NR=2023033936A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VELLORE, Kim Ramkumar</creatorcontrib><title>QUARTZ SUSCEPTOR FOR ACCURATE NON-CONTACT TEMPERATURE MEASUREMENT</title><description>The present disclosure generally relates to a substrate support for processing of semiconductor substrates. In one example, the substrate support has a body. The body has a top surface configured to support a substrate thereon. The body has a bottom surface opposite the top surface. The body has an upper portion disposed at the top surface and a lower portion disposed at the bottom surface. An IR blocking material is encased by the upper portion and the lower portion, wherein the IR blocking material is an optically opaque at IR wavelengths and the lower portion is optically transparent at IR wavelengths.
La présente divulgation se rapporte de manière générale à un support de substrat destiné au traitement de substrats semi-conducteurs. Dans un exemple, le support de substrat comporte un corps. Le corps comporte une surface supérieure conçue pour porter un substrat sur cette dernière. Le corps comporte une surface inférieure opposée à la surface supérieure. Le corps comporte une partie supérieure disposée au niveau de la surface supérieure et une partie inférieure disposée au niveau de la surface inférieure. Un matériau de blocage d'IR est enfermé par la partie supérieure et la partie inférieure, le matériau de blocage d'IR étant optiquement opaque aux longueurs d'onde IR et la partie inférieure étant optiquement transparente aux longueurs d'onde IR.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAMDHUMColSCA4NdnYNCPEPUnADYkdn59AgxxBXBT9_P11nf78QR-cQhRBX3wBXoGhokKuCr6tjMJD2dfUL4WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgZGxgbGxpbGZo6GxsSpAgDJiyxs</recordid><startdate>20230309</startdate><enddate>20230309</enddate><creator>VELLORE, Kim Ramkumar</creator><scope>EVB</scope></search><sort><creationdate>20230309</creationdate><title>QUARTZ SUSCEPTOR FOR ACCURATE NON-CONTACT TEMPERATURE MEASUREMENT</title><author>VELLORE, Kim Ramkumar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2023033936A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>VELLORE, Kim Ramkumar</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VELLORE, Kim Ramkumar</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>QUARTZ SUSCEPTOR FOR ACCURATE NON-CONTACT TEMPERATURE MEASUREMENT</title><date>2023-03-09</date><risdate>2023</risdate><abstract>The present disclosure generally relates to a substrate support for processing of semiconductor substrates. In one example, the substrate support has a body. The body has a top surface configured to support a substrate thereon. The body has a bottom surface opposite the top surface. The body has an upper portion disposed at the top surface and a lower portion disposed at the bottom surface. An IR blocking material is encased by the upper portion and the lower portion, wherein the IR blocking material is an optically opaque at IR wavelengths and the lower portion is optically transparent at IR wavelengths.
La présente divulgation se rapporte de manière générale à un support de substrat destiné au traitement de substrats semi-conducteurs. Dans un exemple, le support de substrat comporte un corps. Le corps comporte une surface supérieure conçue pour porter un substrat sur cette dernière. Le corps comporte une surface inférieure opposée à la surface supérieure. Le corps comporte une partie supérieure disposée au niveau de la surface supérieure et une partie inférieure disposée au niveau de la surface inférieure. Un matériau de blocage d'IR est enfermé par la partie supérieure et la partie inférieure, le matériau de blocage d'IR étant optiquement opaque aux longueurs d'onde IR et la partie inférieure étant optiquement transparente aux longueurs d'onde IR.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | QUARTZ SUSCEPTOR FOR ACCURATE NON-CONTACT TEMPERATURE MEASUREMENT |
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