MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES

Provided is a mask blank comprising a thin film having a sufficiently fast etching rate. The mask blank comprises a multilayer reflective film (2) and a pattern-forming thin film (4) in this order on the main surface of a substrate. The thin film (4) contains tantalum, molybdenum, and nitrogen, and...

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Bibliographische Detailangaben

Hauptverfasser:	ONO, Takuro, IKEBE, Yohei
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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