MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES
Provided is a mask blank comprising a thin film having a sufficiently fast etching rate. The mask blank comprises a multilayer reflective film (2) and a pattern-forming thin film (4) in this order on the main surface of a substrate. The thin film (4) contains tantalum, molybdenum, and nitrogen, and...
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| creator | ONO, Takuro IKEBE, Yohei |
| description | Provided is a mask blank comprising a thin film having a sufficiently fast etching rate. The mask blank comprises a multilayer reflective film (2) and a pattern-forming thin film (4) in this order on the main surface of a substrate. The thin film (4) contains tantalum, molybdenum, and nitrogen, and the ratio of the nitrogen content [atom%] to the total content [atom%] of the tantalum and molybdenum in the thin film (4) is at least 0.15.
L'invention concerne une ébauche de masque comprenant un film mince ayant une vitesse de gravure suffisamment rapide. L'ébauche de masque comprend un film réfléchissant multicouche (2) et un film mince de formation de motif (4) disposés dans cet ordre sur la surface principale d'un substrat. Le film mince (4) contient du tantale, du molybdène et de l'azote, et le rapport de la teneur en azote [en pourcentage atomique] à la teneur totale [en pourcentage atomique] du tantale et du molybdène dans le film mince (4) est d'au moins 0,15.
エッチング速度が十分に速い薄膜を備えたマスクブランクを提供する。 基板の主表面上に、多層反射膜（２）及びパターン形成用の薄膜（４）をこの順に備えるマスクブランクであって、前記薄膜（４）は、タンタル、モリブデン、および窒素を含み、前記薄膜（４）のタンタルとモリブデンの合計含有量［原子％］に対する窒素含有量［原子％］の比率は、０．１５以上である。 |
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L'invention concerne une ébauche de masque comprenant un film mince ayant une vitesse de gravure suffisamment rapide. L'ébauche de masque comprend un film réfléchissant multicouche (2) et un film mince de formation de motif (4) disposés dans cet ordre sur la surface principale d'un substrat. Le film mince (4) contient du tantale, du molybdène et de l'azote, et le rapport de la teneur en azote [en pourcentage atomique] à la teneur totale [en pourcentage atomique] du tantale et du molybdène dans le film mince (4) est d'au moins 0,15.
エッチング速度が十分に速い薄膜を備えたマスクブランクを提供する。 基板の主表面上に、多層反射膜（２）及びパターン形成用の薄膜（４）をこの順に備えるマスクブランクであって、前記薄膜（４）は、タンタル、モリブデン、および窒素を含み、前記薄膜（４）のタンタルとモリブデンの合計含有量［原子％］に対する窒素含有量［原子％］の比率は、０．１５以上である。</description><language>eng ; fre ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221215&DB=EPODOC&CC=WO&NR=2022259915A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221215&DB=EPODOC&CC=WO&NR=2022259915A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONO, Takuro</creatorcontrib><creatorcontrib>IKEBE, Yohei</creatorcontrib><title>MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES</title><description>Provided is a mask blank comprising a thin film having a sufficiently fast etching rate. The mask blank comprises a multilayer reflective film (2) and a pattern-forming thin film (4) in this order on the main surface of a substrate. The thin film (4) contains tantalum, molybdenum, and nitrogen, and the ratio of the nitrogen content [atom%] to the total content [atom%] of the tantalum and molybdenum in the thin film (4) is at least 0.15.
L'invention concerne une ébauche de masque comprenant un film mince ayant une vitesse de gravure suffisamment rapide. L'ébauche de masque comprend un film réfléchissant multicouche (2) et un film mince de formation de motif (4) disposés dans cet ordre sur la surface principale d'un substrat. Le film mince (4) contient du tantale, du molybdène et de l'azote, et le rapport de la teneur en azote [en pourcentage atomique] à la teneur totale [en pourcentage atomique] du tantale et du molybdène dans le film mince (4) est d'au moins 0,15.
エッチング速度が十分に速い薄膜を備えたマスクブランクを提供する。 基板の主表面上に、多層反射膜（２）及びパターン形成用の薄膜（４）をこの順に備えるマスクブランクであって、前記薄膜（４）は、タンタル、モリブデン、および窒素を含み、前記薄膜（４）のタンタルとモリブデンの合計含有量［原子％］に対する窒素含有量［原子％］の比率は、０．１５以上である。</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD2dQz2VnDycfTz1lEIcnXzcXUO8QxzVQAJ6yg4-rko-LqGePi7KLj5BykEBPm7hDp7-rkrBLv6ejr7-wF5IUBxF9cwT2fXYB4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh_ub2RgZGRkamlpaOpoaEycKgAQCy5V</recordid><startdate>20221215</startdate><enddate>20221215</enddate><creator>ONO, Takuro</creator><creator>IKEBE, Yohei</creator><scope>EVB</scope></search><sort><creationdate>20221215</creationdate><title>MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES</title><author>ONO, Takuro ; IKEBE, Yohei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2022259915A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>ONO, Takuro</creatorcontrib><creatorcontrib>IKEBE, Yohei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONO, Takuro</au><au>IKEBE, Yohei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES</title><date>2022-12-15</date><risdate>2022</risdate><abstract>Provided is a mask blank comprising a thin film having a sufficiently fast etching rate. The mask blank comprises a multilayer reflective film (2) and a pattern-forming thin film (4) in this order on the main surface of a substrate. The thin film (4) contains tantalum, molybdenum, and nitrogen, and the ratio of the nitrogen content [atom%] to the total content [atom%] of the tantalum and molybdenum in the thin film (4) is at least 0.15.
L'invention concerne une ébauche de masque comprenant un film mince ayant une vitesse de gravure suffisamment rapide. L'ébauche de masque comprend un film réfléchissant multicouche (2) et un film mince de formation de motif (4) disposés dans cet ordre sur la surface principale d'un substrat. Le film mince (4) contient du tantale, du molybdène et de l'azote, et le rapport de la teneur en azote [en pourcentage atomique] à la teneur totale [en pourcentage atomique] du tantale et du molybdène dans le film mince (4) est d'au moins 0,15.
エッチング速度が十分に速い薄膜を備えたマスクブランクを提供する。 基板の主表面上に、多層反射膜（２）及びパターン形成用の薄膜（４）をこの順に備えるマスクブランクであって、前記薄膜（４）は、タンタル、モリブデン、および窒素を含み、前記薄膜（４）のタンタルとモリブデンの合計含有量［原子％］に対する窒素含有量［原子％］の比率は、０．１５以上である。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES |
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