DECOMPOSING/CLEANING COMPOSITION, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING ADHESIVE POLYMER

Provided is a decomposing/cleaning composition having a high etching speed. The decomposing/cleaning composition contains: (A) an N-substituted amide compound, in which 2 alkyl groups are bonded to an amide nitrogen atom, as an aprotic solvent; and (B) a quaternary ammonium alkyl fluoride or a hydra...

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Hauptverfasser: MIYAHARA, Kuniaki, NAKAZAKI, Susumu
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NAKAZAKI, Susumu
description Provided is a decomposing/cleaning composition having a high etching speed. The decomposing/cleaning composition contains: (A) an N-substituted amide compound, in which 2 alkyl groups are bonded to an amide nitrogen atom, as an aprotic solvent; and (B) a quaternary ammonium alkyl fluoride or a hydrate thereof. The content of an N-substituted amide acid derivative, which is a compound in which 2 hydrogen atoms on a carbon atom at the α-position of the amide nitrogen atom of the N-substituted amide compound (A) are substituted with oxo groups, is 550 ppm by mass or less. L'invention concerne une composition de décomposition/nettoyage ayant une vitesse de gravure élevée. La composition de décomposition/nettoyage contient : (A) un composé amide N-substitué, dans lequel 2 groupes alkyle sont liés à un atome d'azote amide, en tant que solvant aprotique ; et (B) un fluorure d'alkyle d'ammonium quaternaire ou un hydrate de celui-ci. La teneur en dérivé d'acide amidique N-substitué, qui est un composé dans lequel 2 atomes d'hydrogène sur un atome de carbone en position α de l'atome d'azote amidique du composé amidique N-substitué (A) sont substitués par des groupes oxo, est inférieure ou égale à 550 ppm en masse. 高いエッチング速度を示す分解洗浄組成物の提供。非プロトン性溶媒として(A)アミド窒素原子に2つのアルキル基が結合したN-置換アミド化合物、及び(B)第四級フッ化アルキルアンモニウム又はその水和物を含有する分解洗浄組成物であって、(A)N-置換アミド化合物のアミド窒素原子のα位にある炭素原子上の2個の水素原子がオキソ基で置換された化合物であるN-置換アミド酸化誘導体の含有量が、550質量ppm以下である、分解洗浄組成物。
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The decomposing/cleaning composition contains: (A) an N-substituted amide compound, in which 2 alkyl groups are bonded to an amide nitrogen atom, as an aprotic solvent; and (B) a quaternary ammonium alkyl fluoride or a hydrate thereof. The content of an N-substituted amide acid derivative, which is a compound in which 2 hydrogen atoms on a carbon atom at the α-position of the amide nitrogen atom of the N-substituted amide compound (A) are substituted with oxo groups, is 550 ppm by mass or less. L'invention concerne une composition de décomposition/nettoyage ayant une vitesse de gravure élevée. La composition de décomposition/nettoyage contient : (A) un composé amide N-substitué, dans lequel 2 groupes alkyle sont liés à un atome d'azote amide, en tant que solvant aprotique ; et (B) un fluorure d'alkyle d'ammonium quaternaire ou un hydrate de celui-ci. 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The decomposing/cleaning composition contains: (A) an N-substituted amide compound, in which 2 alkyl groups are bonded to an amide nitrogen atom, as an aprotic solvent; and (B) a quaternary ammonium alkyl fluoride or a hydrate thereof. The content of an N-substituted amide acid derivative, which is a compound in which 2 hydrogen atoms on a carbon atom at the α-position of the amide nitrogen atom of the N-substituted amide compound (A) are substituted with oxo groups, is 550 ppm by mass or less. L'invention concerne une composition de décomposition/nettoyage ayant une vitesse de gravure élevée. La composition de décomposition/nettoyage contient : (A) un composé amide N-substitué, dans lequel 2 groupes alkyle sont liés à un atome d'azote amide, en tant que solvant aprotique ; et (B) un fluorure d'alkyle d'ammonium quaternaire ou un hydrate de celui-ci. 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The decomposing/cleaning composition contains: (A) an N-substituted amide compound, in which 2 alkyl groups are bonded to an amide nitrogen atom, as an aprotic solvent; and (B) a quaternary ammonium alkyl fluoride or a hydrate thereof. The content of an N-substituted amide acid derivative, which is a compound in which 2 hydrogen atoms on a carbon atom at the α-position of the amide nitrogen atom of the N-substituted amide compound (A) are substituted with oxo groups, is 550 ppm by mass or less. L'invention concerne une composition de décomposition/nettoyage ayant une vitesse de gravure élevée. La composition de décomposition/nettoyage contient : (A) un composé amide N-substitué, dans lequel 2 groupes alkyle sont liés à un atome d'azote amide, en tant que solvant aprotique ; et (B) un fluorure d'alkyle d'ammonium quaternaire ou un hydrate de celui-ci. La teneur en dérivé d'acide amidique N-substitué, qui est un composé dans lequel 2 atomes d'hydrogène sur un atome de carbone en position α de l'atome d'azote amidique du composé amidique N-substitué (A) sont substitués par des groupes oxo, est inférieure ou égale à 550 ppm en masse. 高いエッチング速度を示す分解洗浄組成物の提供。非プロトン性溶媒として(A)アミド窒素原子に2つのアルキル基が結合したN-置換アミド化合物、及び(B)第四級フッ化アルキルアンモニウム又はその水和物を含有する分解洗浄組成物であって、(A)N-置換アミド化合物のアミド窒素原子のα位にある炭素原子上の2個の水素原子がオキソ基で置換された化合物であるN-置換アミド酸化誘導体の含有量が、550質量ppm以下である、分解洗浄組成物。</abstract><oa>free_for_read</oa></addata></record>
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language eng ; fre ; jpn
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subjects ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES
BASIC ELECTRIC ELEMENTS
CANDLES
CHEMISTRY
CLEANING
CLEANING IN GENERAL
DETERGENT COMPOSITIONS
DETERGENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FATTY ACIDS THEREFROM
METALLURGY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
RECOVERY OF GLYCEROL
RESIN SOAPS
SEMICONDUCTOR DEVICES
SOAP OR SOAP-MAKING
TRANSPORTING
USE OF SINGLE SUBSTANCES AS DETERGENTS
title DECOMPOSING/CLEANING COMPOSITION, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING ADHESIVE POLYMER
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